Activation Characteristics and Defect Structure in Si-Implanted GaAs-on-Si

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)1161-1163
    Number of pages3
    JournalApplied Physics Letters
    Issue number17
    StatePublished - 1987

    Bibliographical note

    Work performed by Spire Corporation, Bedford, Massachusetts; AT&T Bell Laboratories, Murray Hill, New Jersey; and Spire Corporation, Bedford, Massachusetts

    NREL Publication Number

    • ACNR/JA-9653

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