Activation Characteristics and Defect Structure in Si-Implanted GaAs-on-Si

doi:10.1063/1.97949

Activation Characteristics and Defect Structure in Si-Implanted GaAs-on-Si

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	1161-1163
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	17
DOIs	https://doi.org/10.1063/1.97949
State	Published - 1987

Bibliographical note

Work performed by Spire Corporation, Bedford, Massachusetts; AT&T Bell Laboratories, Murray Hill, New Jersey; and Spire Corporation, Bedford, Massachusetts

NREL Publication Number

ACNR/JA-9653

Access to Document

10.1063/1.97949

Cite this

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title = "Activation Characteristics and Defect Structure in Si-Implanted GaAs-on-Si",

author = "NREL",

note = "Work performed by Spire Corporation, Bedford, Massachusetts; AT&T Bell Laboratories, Murray Hill, New Jersey; and Spire Corporation, Bedford, Massachusetts",

year = "1987",

doi = "10.1063/1.97949",

language = "American English",

volume = "50",

pages = "1161--1163",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

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TY - JOUR

T1 - Activation Characteristics and Defect Structure in Si-Implanted GaAs-on-Si

AU - NREL, null

N1 - Work performed by Spire Corporation, Bedford, Massachusetts; AT&T Bell Laboratories, Murray Hill, New Jersey; and Spire Corporation, Bedford, Massachusetts

PY - 1987

Y1 - 1987

U2 - 10.1063/1.97949

DO - 10.1063/1.97949

M3 - Article

SN - 0003-6951

VL - 50

SP - 1161

EP - 1163

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -