Advanced Technique for Measuring Minority-Carrier Parameters and Defect Properties of Semiconductors

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Rapid and contactless defect characterization is a very desirable goal in most current technologies. We will describe the contactless, resonant-coupled photoconductive decay (RCPCD) technique, as applied to a variety of wafer and thin-film materials. Using this technique, we can measure recombination lifetime over many decades of injection level. We can also measure relative values of minority-carrier mobility and diffusion length. By scanning the excitation wavelength, we can measure spectral response and photoconductive excitation spectra. Deep-level impurities can also be detected by several variations of RCPCD. We will show the general versatility of this technique.

Original languageAmerican English
Pages (from-to)161-172
Number of pages12
JournalMaterials Science and Engineering: B
Issue number1-3
StatePublished - 15 Sep 2003
EventE-MRS 2002 Symposium E - Strasbourg, France
Duration: 18 Jun 200221 Jun 2002

NREL Publication Number

  • NREL/JA-520-32452


  • Contactless
  • Deep-level impurities
  • Defect characterization
  • Minority-carrier mobility
  • Recombination lifetime


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