Abstract
We demonstrate the controlled alteration of bulk defects in CdTe single crystals and polycrystalline films to achieve high bulk minority-carrier lifetime and p-type doping. Low-temperature photoluminescence measurements confirm that bulk defect chemistry is altered by inserting intentional extrinsic dopants. Group I dopants such as copper display a tradeoff where increased doping decreases lifetime. By incorporating a Group V dopant source such as phosphorus, bulk lifetime values of 20-40 ns with acceptor density values of 0.7-1.0×1016 cm-3 are obtained in single and polycrystalline CdTe crystals. This exceptional combination of long lifetime and high p-type doping in a manufacturable material provides a path to increase open-circuit voltage, fill factor, and efficiency in CdTe photovoltaic devices.
Original language | American English |
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Pages | 3258-3260 |
Number of pages | 3 |
DOIs | |
State | Published - 2014 |
Event | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014 |
Conference
Conference | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 |
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Country/Territory | United States |
City | Denver |
Period | 8/06/14 → 13/06/14 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
NREL Publication Number
- NREL/CP-5K00-61197
Keywords
- carrier lifetime
- CdTe
- doping
- photovoltaic cells