Advances in Control of Doping and Lifetime in Single-Crystal and Polycrystalline CdTe

James Burst; David Albin; Joel Duenow; Stuart Farrell; Wyatt Metzger; Matthew Reese; Darius Kuciauskas

doi:10.1109/PVSC.2014.6925631

Advances in Control of Doping and Lifetime in Single-Crystal and Polycrystalline CdTe

James Burst
, David Albin
, Joel Duenow
, Stuart Farrell
, Wyatt Metzger
, Matthew Reese
, Darius Kuciauskas

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

We demonstrate the controlled alteration of bulk defects in CdTe single crystals and polycrystalline films to achieve high bulk minority-carrier lifetime and p-type doping. Low-temperature photoluminescence measurements confirm that bulk defect chemistry is altered by inserting intentional extrinsic dopants. Group I dopants such as copper display a tradeoff where increased doping decreases lifetime. By incorporating a Group V dopant source such as phosphorus, bulk lifetime values of 20-40 ns with acceptor density values of 0.7-1.0×10¹⁶ cm^-3 are obtained in single and polycrystalline CdTe crystals. This exceptional combination of long lifetime and high p-type doping in a manufacturable material provides a path to increase open-circuit voltage, fill factor, and efficiency in CdTe photovoltaic devices.

Original language	American English
Pages	3258-3260
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2014.6925631 https://doi.org/10.1109/PVSC.2014.6925631
State	Published - 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NLR Publication Number

NREL/CP-5K00-61197

Keywords

carrier lifetime
CdTe
doping
photovoltaic cells

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Burst, J., Albin, D., Duenow, J., Farrell, S., Metzger, W., Reese, M., & Kuciauskas, D. (2014). Advances in Control of Doping and Lifetime in Single-Crystal and Polycrystalline CdTe. 3258-3260. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC.2014.6925631, https://doi.org/10.1109/PVSC.2014.6925631

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title = "Advances in Control of Doping and Lifetime in Single-Crystal and Polycrystalline CdTe",

abstract = "We demonstrate the controlled alteration of bulk defects in CdTe single crystals and polycrystalline films to achieve high bulk minority-carrier lifetime and p-type doping. Low-temperature photoluminescence measurements confirm that bulk defect chemistry is altered by inserting intentional extrinsic dopants. Group I dopants such as copper display a tradeoff where increased doping decreases lifetime. By incorporating a Group V dopant source such as phosphorus, bulk lifetime values of 20-40 ns with acceptor density values of 0.7-1.0×1016 cm-3 are obtained in single and polycrystalline CdTe crystals. This exceptional combination of long lifetime and high p-type doping in a manufacturable material provides a path to increase open-circuit voltage, fill factor, and efficiency in CdTe photovoltaic devices.",

keywords = "carrier lifetime, CdTe, doping, photovoltaic cells",

author = "James Burst and David Albin and Joel Duenow and Stuart Farrell and Wyatt Metzger and Matthew Reese and Darius Kuciauskas",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

doi = "10.1109/PVSC.2014.6925631",

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Burst, J, Albin, D, Duenow, J, Farrell, S, Metzger, W, Reese, M & Kuciauskas, D 2014, 'Advances in Control of Doping and Lifetime in Single-Crystal and Polycrystalline CdTe', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 3258-3260. https://doi.org/10.1109/PVSC.2014.6925631, https://doi.org/10.1109/PVSC.2014.6925631

TY - CONF

T1 - Advances in Control of Doping and Lifetime in Single-Crystal and Polycrystalline CdTe

AU - Burst, James

AU - Albin, David

AU - Duenow, Joel

AU - Farrell, Stuart

AU - Metzger, Wyatt

AU - Reese, Matthew

AU - Kuciauskas, Darius

PY - 2014

Y1 - 2014

N2 - We demonstrate the controlled alteration of bulk defects in CdTe single crystals and polycrystalline films to achieve high bulk minority-carrier lifetime and p-type doping. Low-temperature photoluminescence measurements confirm that bulk defect chemistry is altered by inserting intentional extrinsic dopants. Group I dopants such as copper display a tradeoff where increased doping decreases lifetime. By incorporating a Group V dopant source such as phosphorus, bulk lifetime values of 20-40 ns with acceptor density values of 0.7-1.0×1016 cm-3 are obtained in single and polycrystalline CdTe crystals. This exceptional combination of long lifetime and high p-type doping in a manufacturable material provides a path to increase open-circuit voltage, fill factor, and efficiency in CdTe photovoltaic devices.

AB - We demonstrate the controlled alteration of bulk defects in CdTe single crystals and polycrystalline films to achieve high bulk minority-carrier lifetime and p-type doping. Low-temperature photoluminescence measurements confirm that bulk defect chemistry is altered by inserting intentional extrinsic dopants. Group I dopants such as copper display a tradeoff where increased doping decreases lifetime. By incorporating a Group V dopant source such as phosphorus, bulk lifetime values of 20-40 ns with acceptor density values of 0.7-1.0×1016 cm-3 are obtained in single and polycrystalline CdTe crystals. This exceptional combination of long lifetime and high p-type doping in a manufacturable material provides a path to increase open-circuit voltage, fill factor, and efficiency in CdTe photovoltaic devices.

KW - carrier lifetime

KW - CdTe

KW - doping

KW - photovoltaic cells

UR - https://www.scopus.com/pages/publications/84912074459

U2 - 10.1109/PVSC.2014.6925631

DO - 10.1109/PVSC.2014.6925631

M3 - Paper

AN - SCOPUS:84912074459

SP - 3258

EP - 3260

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Advances in Control of Doping and Lifetime in Single-Crystal and Polycrystalline CdTe

Abstract

Conference

Bibliographical note

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Keywords

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