Advances in the CIS Research at NREL

doi:10.1109/PVSC.1997.654092

Advances in the CIS Research at NREL

Research output: Contribution to conference › Paper

Abstract

This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices; without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between theCBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CuInGaSe2 device without CdS or other buffer layers.

Original language	American English
Pages	319-322
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654092
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-520-22946

NREL Publication Number

NREL/CP-520-24952

Access to Document

10.1109/PVSC.1997.654092

Cite this

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title = "Advances in the CIS Research at NREL",

abstract = "This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices; without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between theCBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CuInGaSe2 device without CdS or other buffer layers.",

author = "NREL",

note = "For preprint version, including full text online document, see NREL/CP-520-22946; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654092",

language = "American English",

pages = "319--322",

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PY - 1997

Y1 - 1997

N2 - This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices; without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between theCBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CuInGaSe2 device without CdS or other buffer layers.

AB - This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices; without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between theCBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CuInGaSe2 device without CdS or other buffer layers.

U2 - 10.1109/PVSC.1997.654092

DO - 10.1109/PVSC.1997.654092

M3 - Paper

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T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Advances in the CIS Research at NREL

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Fingerprint

Cite this