Advances in the CIS Research at NREL

Advances in the CIS Research at NREL

Research output: Contribution to conference › Paper

Abstract

This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices; without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between theCBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CuInGaSe2 device without CdS or other buffer layers.

Original language	American English
Number of pages	5
State	Published - 1997
Event	26th IEEE PVSC - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	26th IEEE PVSC
City	Anaheim, California
Period	29/09/97 → 3/10/97

NREL Publication Number

NREL/CP-520-22946

Access to Document

https://www.nrel.gov/docs/legosti/fy97/22946.pdf

Cite this

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title = "Advances in the CIS Research at NREL",

abstract = "This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices; without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between theCBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CuInGaSe2 device without CdS or other buffer layers.",

author = "NREL",

year = "1997",

language = "American English",

note = "26th IEEE PVSC ; Conference date: 29-09-1997 Through 03-10-1997",

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T1 - Advances in the CIS Research at NREL

AU - NREL, null

PY - 1997

Y1 - 1997

N2 - This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices; without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between theCBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CuInGaSe2 device without CdS or other buffer layers.

AB - This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices; without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between theCBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CuInGaSe2 device without CdS or other buffer layers.

M3 - Paper

T2 - 26th IEEE PVSC

Y2 - 29 September 1997 through 3 October 1997

ER -

Advances in the CIS Research at NREL

Abstract

Conference

NREL Publication Number

Access to Document

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Cite this