AlGaAs/Si Dual-Junction Tandem Solar Cells by Epitaxial Lift-Off and Print-Transfer-Assisted Direct Bonding

Kanglin Xiong; Hongyi Mi; Tzu-Hsuan Chang; Dong Liu; Zhenyang Xia; Meng-Yin Wu; Xin Yin; Shaoqin Gong; Weidong Zhou; Jae Shin; Xiuling Li; Michael Arnold; Xudong Wang; Zhenqiang Ma

doi:10.1002/ese3.182

AlGaAs/Si Dual-Junction Tandem Solar Cells by Epitaxial Lift-Off and Print-Transfer-Assisted Direct Bonding

Kanglin Xiong, Hongyi Mi, Tzu-Hsuan Chang, Dong Liu, Zhenyang Xia, Meng-Yin Wu, Xin Yin, Shaoqin Gong, Weidong Zhou, Jae Shin, Xiuling Li, Michael Arnold, Xudong Wang, Zhenqiang Ma

Research output: Contribution to journal › Article › peer-review

11 Scopus Citations

Abstract

A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

Original language	American English
Pages (from-to)	47-55
Number of pages	9
Journal	Energy Science and Engineering
Volume	6
Issue number	1
DOIs	https://doi.org/10.1002/ese3.182
State	Published - 2018

NREL Publication Number

NREL/JA-5J00-71243

Keywords

epitaxy
heterogeneous
solar cell
thin films

Access to Document

10.1002/ese3.182

https://www.nrel.gov/docs/fy18osti/71243.pdf

Cite this

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title = "AlGaAs/Si Dual-Junction Tandem Solar Cells by Epitaxial Lift-Off and Print-Transfer-Assisted Direct Bonding",

abstract = "A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.",

keywords = "epitaxy, heterogeneous, solar cell, thin films",

author = "Kanglin Xiong and Hongyi Mi and Tzu-Hsuan Chang and Dong Liu and Zhenyang Xia and Meng-Yin Wu and Xin Yin and Shaoqin Gong and Weidong Zhou and Jae Shin and Xiuling Li and Michael Arnold and Xudong Wang and Zhenqiang Ma",

year = "2018",

doi = "10.1002/ese3.182",

language = "American English",

volume = "6",

pages = "47--55",

journal = "Energy Science and Engineering",

issn = "2050-0505",

publisher = "John Wiley and Sons Ltd",

number = "1",

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TY - JOUR

T1 - AlGaAs/Si Dual-Junction Tandem Solar Cells by Epitaxial Lift-Off and Print-Transfer-Assisted Direct Bonding

AU - Xiong, Kanglin

AU - Mi, Hongyi

AU - Chang, Tzu-Hsuan

AU - Liu, Dong

AU - Xia, Zhenyang

AU - Wu, Meng-Yin

AU - Yin, Xin

AU - Gong, Shaoqin

AU - Zhou, Weidong

AU - Shin, Jae

AU - Li, Xiuling

AU - Arnold, Michael

AU - Wang, Xudong

AU - Ma, Zhenqiang

PY - 2018

Y1 - 2018

N2 - A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

AB - A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

KW - epitaxy

KW - heterogeneous

KW - solar cell

KW - thin films

U2 - 10.1002/ese3.182

DO - 10.1002/ese3.182

M3 - Article

SN - 2050-0505

VL - 6

SP - 47

EP - 55

JO - Energy Science and Engineering

JF - Energy Science and Engineering

IS - 1

ER -

AlGaAs/Si Dual-Junction Tandem Solar Cells by Epitaxial Lift-Off and Print-Transfer-Assisted Direct Bonding

Abstract

NREL Publication Number

Keywords

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