Abstract
We demonstrate dual junction (Al)GaInP/GaAs solar cells that are designed to operate at 400 degrees C and 1000X concentration. The cells have stable front metallization and anti-reflection coatings at 400 degrees C. The choice of bandgaps was first estimated using ideal solar cell characteristics and then refined based on empirical data. We show power conversion efficiency of ~15 +/- 1% for AR-coated cells at 400 degrees C and high concentration, with pathways to improved performance.
Original language | American English |
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Pages | 42-45 |
Number of pages | 4 |
DOIs | |
State | Published - 2018 |
Event | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017 |
Conference
Conference | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) |
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City | Washington, D.C. |
Period | 25/06/17 → 30/06/17 |
NREL Publication Number
- NREL/CP-5900-68718
Keywords
- high temperature
- III-V solar cell
- multijunction