(Al)GaInP/GaAs Tandem Solar Cells For Power Conversion at Elevated Temperature and High Concentration

Emmett E. Perl; John Simon; Daniel J. Friedman; Nikhil Jain; Paul Sharps; Claiborne McPheeters; Yukun Sun; Minjoo L. Lee; Myles A. Steiner

doi:10.1109/JPHOTOV.2017.2783853

(Al)GaInP/GaAs Tandem Solar Cells For Power Conversion at Elevated Temperature and High Concentration

Emmett E. Perl
, John Simon
, Daniel J. Friedman
, Nikhil Jain
, Paul Sharps
, Claiborne McPheeters
, Yukun Sun
, Minjoo L. Lee
, Myles A. Steiner

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

28 Scopus Citations

Abstract

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 °C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 °C, we find that ∼1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 °C to 400 °C. We measure a power conversion efficiency of 16.4% ± 1% at 400 °C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 °C, the dual-junction device shows a relative loss in efficiency of only ∼1%.

Original language	American English
Pages (from-to)	640-645
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	8
Issue number	2
DOIs	https://doi.org/10.1109/JPHOTOV.2017.2783853 https://doi.org/10.1109/JPHOTOV.2017.2783853
State	Published - 2018

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NLR Publication Number

NREL/JA-5J00-70703

Keywords

high temperature
III-V and concentrator photovoltaics (PV)
PV cells
semiconductor materials
solar energy

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@article{997d52c6915045cf953a211a148ec74f,

title = "(Al)GaInP/GaAs Tandem Solar Cells For Power Conversion at Elevated Temperature and High Concentration",

abstract = "We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 °C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 °C, we find that ∼1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 °C to 400 °C. We measure a power conversion efficiency of 16.4\% ± 1\% at 400 °C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 °C, the dual-junction device shows a relative loss in efficiency of only ∼1\%.",

keywords = "high temperature, III-V and concentrator photovoltaics (PV), PV cells, semiconductor materials, solar energy",

author = "Perl, \{Emmett E.\} and John Simon and Friedman, \{Daniel J.\} and Nikhil Jain and Paul Sharps and Claiborne McPheeters and Yukun Sun and Lee, \{Minjoo L.\} and Steiner, \{Myles A.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

doi = "10.1109/JPHOTOV.2017.2783853",

language = "American English",

volume = "8",

pages = "640--645",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

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TY - JOUR

T1 - (Al)GaInP/GaAs Tandem Solar Cells For Power Conversion at Elevated Temperature and High Concentration

AU - Perl, Emmett E.

AU - Simon, John

AU - Friedman, Daniel J.

AU - Jain, Nikhil

AU - Sharps, Paul

AU - McPheeters, Claiborne

AU - Sun, Yukun

AU - Lee, Minjoo L.

AU - Steiner, Myles A.

PY - 2018

Y1 - 2018

N2 - We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 °C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 °C, we find that ∼1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 °C to 400 °C. We measure a power conversion efficiency of 16.4% ± 1% at 400 °C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 °C, the dual-junction device shows a relative loss in efficiency of only ∼1%.

AB - We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 °C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 °C, we find that ∼1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 °C to 400 °C. We measure a power conversion efficiency of 16.4% ± 1% at 400 °C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 °C, the dual-junction device shows a relative loss in efficiency of only ∼1%.

KW - high temperature

KW - III-V and concentrator photovoltaics (PV)

KW - PV cells

KW - semiconductor materials

KW - solar energy

UR - https://www.scopus.com/pages/publications/85041237118

U2 - 10.1109/JPHOTOV.2017.2783853

DO - 10.1109/JPHOTOV.2017.2783853

M3 - Article

AN - SCOPUS:85041237118

SN - 2156-3381

VL - 8

SP - 640

EP - 645

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 2

ER -

(Al)GaInP/GaAs Tandem Solar Cells For Power Conversion at Elevated Temperature and High Concentration

Abstract

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Keywords

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