Alignment of Isovalent Impurity Levels: Oxygen Impurity in II-VI Semiconductors: Article No. 041201(R)

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	73
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.73.041201
State	Published - 2006

NREL Publication Number

@article{7b00d7deb9d2427796316214502f321b,

title = "Alignment of Isovalent Impurity Levels: Oxygen Impurity in II-VI Semiconductors: Article No. 041201(R)",

author = "NREL",

year = "2006",

doi = "10.1103/PhysRevB.73.041201",

language = "American English",

volume = "73",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Alignment of Isovalent Impurity Levels: Oxygen Impurity in II-VI Semiconductors

T2 - Article No. 041201(R)

AU - NREL, null

PY - 2006

Y1 - 2006

U2 - 10.1103/PhysRevB.73.041201

DO - 10.1103/PhysRevB.73.041201

M3 - Article

SN - 1098-0121

VL - 73

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

ER -