Abstract
The main obstacle to realizing the use of polycrystalline wide bandgap alloys of CdTe with Mg and Zn in PV is the CdCl 2 processing step. This step, essential to CdTe device performance, removes Zn and Mg from the alloy films while producing less of the benefits seen from the process with CdTe. In this study, the use of Al 2 O 3 CdS, and MgZnO films at the free surface of the alloys to prevent loss of Mg or Zn is investigated. It is found that Al 2 O 3 is the most effective at reducing loss of Mg and Zn, followed by CdS and then MgZnO. A new method of evaluating the transition to CdTe from the as deposited alloy is proposed to account for differences in transition behaviors.
Original language | American English |
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Pages | 283-288 |
Number of pages | 6 |
DOIs | |
State | Published - 2018 |
Event | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) - Waikoloa Village, Hawaii Duration: 10 Jun 2018 → 15 Jun 2018 |
Conference
Conference | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) |
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City | Waikoloa Village, Hawaii |
Period | 10/06/18 → 15/06/18 |
NREL Publication Number
- NREL/CP-5K00-73730
Keywords
- II-VI alloys
- passivation
- tandem photovoltaics
- thin films