Alloy Ordering in GaInP Alloys: A Cross-Sectional Scanning Tunneling Microscopy Study

N. Liu; C. K. Shih; J. Geisz; A. Mascarenhas; J. M. Olson

doi:10.1063/1.122341

Alloy Ordering in GaInP Alloys: A Cross-Sectional Scanning Tunneling Microscopy Study

N. Liu, C. K. Shih, J. Geisz, A. Mascarenhas, J. M. Olson

Chemistry and Nanoscience

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Abstract

We present a cross-sectional scanning tunneling microscopy (XSTM) study of the spontaneous ordering of Ga_0.48In_0.52P and Ga_0.52In_0.48P grown on (001) GaAs substrates by molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE), respectively. The (111)-type alloy ordering could be seen clearly in the OMVPE-grown alloy region. On the other hand, the MBE-grown region shows a very small degree of ordering as revealed by the STM. Most of the ordered region shows (InP)₁(GaP)₁-type ordering: alternating InP- and GaP-like (1̄11) planes. In addition to this type of ordering, we also observe another type of ordering consisting of two InP-like (1̄11) planes and one GaP-like (1̄11) plane that we call (InP)₂(GaP)₁-type ordering.

Original language	American English
Pages (from-to)	1979-1981
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	14
DOIs	https://doi.org/10.1063/1.122341 https://doi.org/10.1063/1.122341
State	Published - 1998

NREL Publication Number

NREL/JA-590-26050

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title = "Alloy Ordering in GaInP Alloys: A Cross-Sectional Scanning Tunneling Microscopy Study",

abstract = "We present a cross-sectional scanning tunneling microscopy (XSTM) study of the spontaneous ordering of Ga0.48In0.52P and Ga0.52In0.48P grown on (001) GaAs substrates by molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE), respectively. The (111)-type alloy ordering could be seen clearly in the OMVPE-grown alloy region. On the other hand, the MBE-grown region shows a very small degree of ordering as revealed by the STM. Most of the ordered region shows (InP)1(GaP)1-type ordering: alternating InP- and GaP-like ({\=1}11) planes. In addition to this type of ordering, we also observe another type of ordering consisting of two InP-like ({\=1}11) planes and one GaP-like ({\=1}11) plane that we call (InP)2(GaP)1-type ordering.",

author = "N. Liu and Shih, {C. K.} and J. Geisz and A. Mascarenhas and Olson, {J. M.}",

year = "1998",

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T1 - Alloy Ordering in GaInP Alloys: A Cross-Sectional Scanning Tunneling Microscopy Study

AU - Liu, N.

AU - Shih, C. K.

AU - Geisz, J.

AU - Mascarenhas, A.

AU - Olson, J. M.

PY - 1998

Y1 - 1998

N2 - We present a cross-sectional scanning tunneling microscopy (XSTM) study of the spontaneous ordering of Ga0.48In0.52P and Ga0.52In0.48P grown on (001) GaAs substrates by molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE), respectively. The (111)-type alloy ordering could be seen clearly in the OMVPE-grown alloy region. On the other hand, the MBE-grown region shows a very small degree of ordering as revealed by the STM. Most of the ordered region shows (InP)1(GaP)1-type ordering: alternating InP- and GaP-like (1̄11) planes. In addition to this type of ordering, we also observe another type of ordering consisting of two InP-like (1̄11) planes and one GaP-like (1̄11) plane that we call (InP)2(GaP)1-type ordering.

AB - We present a cross-sectional scanning tunneling microscopy (XSTM) study of the spontaneous ordering of Ga0.48In0.52P and Ga0.52In0.48P grown on (001) GaAs substrates by molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE), respectively. The (111)-type alloy ordering could be seen clearly in the OMVPE-grown alloy region. On the other hand, the MBE-grown region shows a very small degree of ordering as revealed by the STM. Most of the ordered region shows (InP)1(GaP)1-type ordering: alternating InP- and GaP-like (1̄11) planes. In addition to this type of ordering, we also observe another type of ordering consisting of two InP-like (1̄11) planes and one GaP-like (1̄11) plane that we call (InP)2(GaP)1-type ordering.

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DO - 10.1063/1.122341

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EP - 1981

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Alloy Ordering in GaInP Alloys: A Cross-Sectional Scanning Tunneling Microscopy Study

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