Abstract
This report summaries work carried out in three areas: CIGSS cells based on ZnO buffer layers, cells with ZnS buffer layers, and general studies of the effects of buffer layers on device performance. These investigations were conducted mainly with CIGSS substrates provided by Siemens Solar Industries. ZnO buffer layers were grown by MOCVD and ZnS layers were deposited by chemical-bath deposition.Active-area efficiencies of 13.4% and 12.8% were achieved for cells based on ZnO and ZnS buffer layers, respectively.
Original language | American English |
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Number of pages | 30 |
State | Published - 2003 |
Bibliographical note
Work performed by Washington State University at Tri-Cities, Richland, WashingtonNREL Publication Number
- NREL/SR-520-33362
Keywords
- buffer-layer
- CIS
- device performance
- electron-band structure
- heterojunctions
- modeling
- PV
- RF sputtering
- spectroscopic ellipsometry
- TCO
- XPS