Aluminum Backside Segregation Gettering

    Research output: Contribution to conferencePaper


    Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon andthe backside aluminum were found exceeding 10/sup 6/ and there are indications for S up to 10/sup 7/.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by the University of California, Berkeley, California

    NREL Publication Number

    • NREL/CP-22382


    Dive into the research topics of 'Aluminum Backside Segregation Gettering'. Together they form a unique fingerprint.

    Cite this