Aluminum Backside Segregation Gettering

doi:10.1109/PVSC.1996.564038

Aluminum Backside Segregation Gettering

Research output: Contribution to conference › Paper

Abstract

Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon andthe backside aluminum were found exceeding 10/sup 6/ and there are indications for S up to 10/sup 7/.

Original language	American English
Pages	441-444
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564038
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by the University of California, Berkeley, California

NREL Publication Number

NREL/CP-22382

Access to Document

10.1109/PVSC.1996.564038

Cite this

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title = "Aluminum Backside Segregation Gettering",

abstract = "Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon andthe backside aluminum were found exceeding 10/sup 6/ and there are indications for S up to 10/sup 7/.",

author = "NREL",

note = "Work performed by the University of California, Berkeley, California; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564038",

language = "American English",

pages = "441--444",

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T1 - Aluminum Backside Segregation Gettering

AU - NREL, null

N1 - Work performed by the University of California, Berkeley, California

PY - 1996

Y1 - 1996

N2 - Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon andthe backside aluminum were found exceeding 10/sup 6/ and there are indications for S up to 10/sup 7/.

AB - Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon andthe backside aluminum were found exceeding 10/sup 6/ and there are indications for S up to 10/sup 7/.

U2 - 10.1109/PVSC.1996.564038

DO - 10.1109/PVSC.1996.564038

M3 - Paper

SP - 441

EP - 444

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Aluminum Backside Segregation Gettering

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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Cite this