Aluminum Doped Zinc Oxide Thin Films Deposited by Ion Beam Sputtering

M. Ruth, J. Tuttle, J. Goral, R. Noufi

Research output: Contribution to journalArticlepeer-review

26 Scopus Citations


Thin films of transparent conducting aluminum-doped ZnO (ZnO:Al) have been deposited by ion beam sputtering. The dependence of electrical and optical characteristics upon aluminum content in the films and upon post deposition annealing has been examined. Films have been produced with resistivities of 1 ×10-3Ω cm and absorption coefficients of 3100 cm-1 in the visible region. By annealing at temperatures of 350-500° C, the achieved resistivities and absorption coefficients are(5×6x)10-4Ω cm and 1500-1000 cm-1, respectively.

Original languageAmerican English
Pages (from-to)363-368
Number of pages6
JournalJournal of Crystal Growth
Issue number2
StatePublished - 1989

NREL Publication Number

  • ACNR/JA-212-11346


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