Aluminum Gettering and Transition Metal Precipitates in PV Silicon

    Research output: Contribution to conferencePaper


    Iron is used as a model impurity to study aluminum gettering and iron precipitation in silicon. Aluminum gettering was found to be effective in removing iron contamination from float zone silicon, greatly increasing minority carrier diffusion lengths from 30 .apprx. 50 .mu.m to 150 .apprx. 170 .mu.m The same process does not significantly improve PV silicon materials, CZ, cast multicrystalline,and EFG. Finite difference modeling suggests that Al gettering in PV silicon is not diffusion limited. It is suggested that barriers to dissolution of impurity precipitates are the main cause of the insufficient gettering response in PV silicon. Initial results of a precipitation and dissolution study are presented, as well as new gettering simulation capabilities.
    Original languageAmerican English
    Number of pages12
    StatePublished - 1997
    EventNREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado
    Duration: 18 Nov 199622 Nov 1996


    ConferenceNREL/SNL Photovoltaics Program Review: 14th Conference
    CityLakewood, Colorado

    Bibliographical note

    Work performed by University of California, Berkeley, California and Lawrence Berkeley National Laboratory, Berkeley, California

    NREL Publication Number

    • NREL/CP-23749


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