Aluminum Gettering and Transition Metal Precipitates in PV Silicon

Aluminum Gettering and Transition Metal Precipitates in PV Silicon

Research output: Contribution to conference › Paper

Abstract

Iron is used as a model impurity to study aluminum gettering and iron precipitation in silicon. Aluminum gettering was found to be effective in removing iron contamination from float zone silicon, greatly increasing minority carrier diffusion lengths from 30 .apprx. 50 .mu.m to 150 .apprx. 170 .mu.m The same process does not significantly improve PV silicon materials, CZ, cast multicrystalline,and EFG. Finite difference modeling suggests that Al gettering in PV silicon is not diffusion limited. It is suggested that barriers to dissolution of impurity precipitates are the main cause of the insufficient gettering response in PV silicon. Initial results of a precipitation and dissolution study are presented, as well as new gettering simulation capabilities.

Original language	American English
Pages	759-770
Number of pages	12
State	Published - 1997
Event	NREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado Duration: 18 Nov 1996 → 22 Nov 1996

Conference

Conference	NREL/SNL Photovoltaics Program Review: 14th Conference
City	Lakewood, Colorado
Period	18/11/96 → 22/11/96

Bibliographical note

Work performed by University of California, Berkeley, California and Lawrence Berkeley National Laboratory, Berkeley, California

NREL Publication Number

NREL/CP-23749

Cite this

@conference{7d7de67910c74477a6b4a4405bf108f8,

title = "Aluminum Gettering and Transition Metal Precipitates in PV Silicon",

abstract = "Iron is used as a model impurity to study aluminum gettering and iron precipitation in silicon. Aluminum gettering was found to be effective in removing iron contamination from float zone silicon, greatly increasing minority carrier diffusion lengths from 30 .apprx. 50 .mu.m to 150 .apprx. 170 .mu.m The same process does not significantly improve PV silicon materials, CZ, cast multicrystalline,and EFG. Finite difference modeling suggests that Al gettering in PV silicon is not diffusion limited. It is suggested that barriers to dissolution of impurity precipitates are the main cause of the insufficient gettering response in PV silicon. Initial results of a precipitation and dissolution study are presented, as well as new gettering simulation capabilities.",

author = "NREL",

note = "Work performed by University of California, Berkeley, California and Lawrence Berkeley National Laboratory, Berkeley, California; NREL/SNL Photovoltaics Program Review: 14th Conference ; Conference date: 18-11-1996 Through 22-11-1996",

year = "1997",

language = "American English",

pages = "759--770",

}

TY - CONF

T1 - Aluminum Gettering and Transition Metal Precipitates in PV Silicon

AU - NREL, null

N1 - Work performed by University of California, Berkeley, California and Lawrence Berkeley National Laboratory, Berkeley, California

PY - 1997

Y1 - 1997

N2 - Iron is used as a model impurity to study aluminum gettering and iron precipitation in silicon. Aluminum gettering was found to be effective in removing iron contamination from float zone silicon, greatly increasing minority carrier diffusion lengths from 30 .apprx. 50 .mu.m to 150 .apprx. 170 .mu.m The same process does not significantly improve PV silicon materials, CZ, cast multicrystalline,and EFG. Finite difference modeling suggests that Al gettering in PV silicon is not diffusion limited. It is suggested that barriers to dissolution of impurity precipitates are the main cause of the insufficient gettering response in PV silicon. Initial results of a precipitation and dissolution study are presented, as well as new gettering simulation capabilities.

AB - Iron is used as a model impurity to study aluminum gettering and iron precipitation in silicon. Aluminum gettering was found to be effective in removing iron contamination from float zone silicon, greatly increasing minority carrier diffusion lengths from 30 .apprx. 50 .mu.m to 150 .apprx. 170 .mu.m The same process does not significantly improve PV silicon materials, CZ, cast multicrystalline,and EFG. Finite difference modeling suggests that Al gettering in PV silicon is not diffusion limited. It is suggested that barriers to dissolution of impurity precipitates are the main cause of the insufficient gettering response in PV silicon. Initial results of a precipitation and dissolution study are presented, as well as new gettering simulation capabilities.

M3 - Paper

SP - 759

EP - 770

T2 - NREL/SNL Photovoltaics Program Review: 14th Conference

Y2 - 18 November 1996 through 22 November 1996

ER -

Aluminum Gettering and Transition Metal Precipitates in PV Silicon

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this