Amber-Green Light-Emitting Diodes using Order-Disorder AlxIn1-xP Heterostructures

Theresa M. Christian, Daniel A. Beaton, Kunal Mukherjee, Kirstin Alberi, Eugene A. Fitzgerald, Angelo Mascarenhas

Research output: Contribution to journalArticlepeer-review

30 Scopus Citations


We demonstrate amber-green emission from AlxIn1- xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded InyGa1-yAs buffer layer and feature electron confinement based on the control of AlxIn1-xP CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm2. The light output at room temperature from our AlxIn1- xP LED structure emitting at 600 nm is 39% as bright as a Ga xIn1-xP LED emitting at 650 nm.

Original languageAmerican English
Article number074505
Number of pages6
JournalJournal of Applied Physics
Issue number7
StatePublished - 21 Aug 2013

NREL Publication Number

  • NREL/JA-5900-59059


  • amber-green
  • diodes
  • LED
  • solid-state lighting
  • SSL


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