Amber-Green Light-Emitting Diodes using Order-Disorder AlxIn1-xP Heterostructures

Theresa M. Christian; Daniel A. Beaton; Kunal Mukherjee; Kirstin Alberi; Eugene A. Fitzgerald; Angelo Mascarenhas

doi:10.1063/1.4818477

Amber-Green Light-Emitting Diodes using Order-Disorder AlxIn1-xP Heterostructures

Theresa M. Christian, Daniel A. Beaton, Kunal Mukherjee, Kirstin Alberi, Eugene A. Fitzgerald, Angelo Mascarenhas

Materials Science

Research output: Contribution to journal › Article › peer-review

30 Scopus Citations

Abstract

We demonstrate amber-green emission from Al_xIn_1- _xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded In_yGa_1-yAs buffer layer and feature electron confinement based on the control of Al_xIn_1-xP CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm². The light output at room temperature from our Al_xIn_1- _xP LED structure emitting at 600 nm is 39% as bright as a Ga _xIn_1-xP LED emitting at 650 nm.

Original language	American English
Article number	074505
Number of pages	6
Journal	Journal of Applied Physics
Volume	114
Issue number	7
DOIs	https://doi.org/10.1063/1.4818477 https://doi.org/10.1063/1.4818477
State	Published - 21 Aug 2013

NREL Publication Number

NREL/JA-5900-59059

Keywords

amber-green
diodes
LED
solid-state lighting
SSL

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title = "Amber-Green Light-Emitting Diodes using Order-Disorder AlxIn1-xP Heterostructures",

abstract = "We demonstrate amber-green emission from AlxIn1- xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded InyGa1-yAs buffer layer and feature electron confinement based on the control of AlxIn1-xP CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm2. The light output at room temperature from our AlxIn1- xP LED structure emitting at 600 nm is 39% as bright as a Ga xIn1-xP LED emitting at 650 nm.",

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T1 - Amber-Green Light-Emitting Diodes using Order-Disorder AlxIn1-xP Heterostructures

AU - Christian, Theresa M.

AU - Beaton, Daniel A.

AU - Mukherjee, Kunal

AU - Alberi, Kirstin

AU - Fitzgerald, Eugene A.

AU - Mascarenhas, Angelo

PY - 2013/8/21

Y1 - 2013/8/21

N2 - We demonstrate amber-green emission from AlxIn1- xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded InyGa1-yAs buffer layer and feature electron confinement based on the control of AlxIn1-xP CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm2. The light output at room temperature from our AlxIn1- xP LED structure emitting at 600 nm is 39% as bright as a Ga xIn1-xP LED emitting at 650 nm.

AB - We demonstrate amber-green emission from AlxIn1- xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded InyGa1-yAs buffer layer and feature electron confinement based on the control of AlxIn1-xP CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm2. The light output at room temperature from our AlxIn1- xP LED structure emitting at 600 nm is 39% as bright as a Ga xIn1-xP LED emitting at 650 nm.

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KW - LED

KW - solid-state lighting

KW - SSL

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Amber-Green Light-Emitting Diodes using Order-Disorder AlxIn1-xP Heterostructures

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Keywords

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