Amorphous Silicon Deposition Rates in Diode and Triode Discharges

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)1369-1373
    Number of pages5
    JournalJournal of Applied Physics
    Issue number4
    StatePublished - 1986

    Bibliographical note

    Work performed by Joint Institute for Laboratory Astrophysics, National Bureau of Standards and University of Colorado, Boulder, Colorado

    NREL Publication Number

    • ACNR/JA-8239

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