Amorphous Silicon-Germanium Deposited by Photo-CVD: Effect of Hydrogen Dilution and Substrate Temperature

Amorphous Silicon-Germanium Deposited by Photo-CVD: Effect of Hydrogen Dilution and Substrate Temperature

Research output: Contribution to conference › Paper

Original language	American English
Pages	653-658
Number of pages	6
State	Published - 1988
Event	MRS Spring Meeting - Reno, Nevada Duration: 5 Apr 1988 → 8 Apr 1988

Conference

Conference	MRS Spring Meeting
City	Reno, Nevada
Period	5/04/88 → 8/04/88

Bibliographical note

Work performed by Institute of Energy Conversion, University of Delaware, Newark, Delaware

NREL Publication Number

ACNR/CP-10503

Cite this

@conference{9a5303546d804478b1ab169d39de6b14,

title = "Amorphous Silicon-Germanium Deposited by Photo-CVD: Effect of Hydrogen Dilution and Substrate Temperature",

author = "NREL",

note = "Work performed by Institute of Energy Conversion, University of Delaware, Newark, Delaware; MRS Spring Meeting ; Conference date: 05-04-1988 Through 08-04-1988",

year = "1988",

language = "American English",

pages = "653--658",

}