Amorphous Silicon Nitride Deposited by Hot-Wire Chemical Vapor Deposition

Fengzhen Liu, Scott Ward, Lynn Gedvilas, Brian Keyes, Bob To, Qi Wang, Errol Sanchez, Shulin Wang

Research output: Contribution to journalArticlepeer-review

27 Scopus Citations


The deposition of high-quality amorphous silicon nitrides by hot-wire chemical vapor deposition using SiH 4, NH 3 and H 2 gases were investigated. The effects of hydrogen dilution, substrate temperature, chamber pressure and filament temperature on silicon nitride film property were studied to optimize the process. Hydrogen dilution improved the process in that the gas ratio of NH 3/SiH 4 was found to be greatly reduced with the assistance of the H 2 gas. The low-substrate-temperature and conformal films can be applied to many applications, such as dielectrics in electronic devices on plastic substrates, protective layers for micromechanical systems and corrosion applications in biochips.

Original languageAmerican English
Pages (from-to)2973-2979
Number of pages7
JournalJournal of Applied Physics
Issue number5
StatePublished - 2004

NREL Publication Number

  • NREL/JA-520-35410


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