Amorphous Silicon Nitride Deposited by Hot-Wire Chemical Vapor Deposition

Fengzhen Liu; Scott Ward; Lynn Gedvilas; Brian Keyes; Bob To; Qi Wang; Errol Sanchez; Shulin Wang

doi:10.1063/1.1775046

Amorphous Silicon Nitride Deposited by Hot-Wire Chemical Vapor Deposition

Fengzhen Liu, Scott Ward, Lynn Gedvilas, Brian Keyes, Bob To, Qi Wang, Errol Sanchez, Shulin Wang

Materials, Chemical, and Computational Science Research Operations

Research output: Contribution to journal › Article › peer-review

28 Scopus Citations

Abstract

The deposition of high-quality amorphous silicon nitrides by hot-wire chemical vapor deposition using SiH ₄, NH ₃ and H ₂ gases were investigated. The effects of hydrogen dilution, substrate temperature, chamber pressure and filament temperature on silicon nitride film property were studied to optimize the process. Hydrogen dilution improved the process in that the gas ratio of NH ₃/SiH ₄ was found to be greatly reduced with the assistance of the H ₂ gas. The low-substrate-temperature and conformal films can be applied to many applications, such as dielectrics in electronic devices on plastic substrates, protective layers for micromechanical systems and corrosion applications in biochips.

Original language	American English
Pages (from-to)	2973-2979
Number of pages	7
Journal	Journal of Applied Physics
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.1775046 https://doi.org/10.1063/1.1775046
State	Published - 2004

NREL Publication Number

NREL/JA-520-35410

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title = "Amorphous Silicon Nitride Deposited by Hot-Wire Chemical Vapor Deposition",

abstract = "The deposition of high-quality amorphous silicon nitrides by hot-wire chemical vapor deposition using SiH 4, NH 3 and H 2 gases were investigated. The effects of hydrogen dilution, substrate temperature, chamber pressure and filament temperature on silicon nitride film property were studied to optimize the process. Hydrogen dilution improved the process in that the gas ratio of NH 3/SiH 4 was found to be greatly reduced with the assistance of the H 2 gas. The low-substrate-temperature and conformal films can be applied to many applications, such as dielectrics in electronic devices on plastic substrates, protective layers for micromechanical systems and corrosion applications in biochips.",

author = "Fengzhen Liu and Scott Ward and Lynn Gedvilas and Brian Keyes and Bob To and Qi Wang and Errol Sanchez and Shulin Wang",

year = "2004",

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AU - Liu, Fengzhen

AU - Ward, Scott

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AU - Keyes, Brian

AU - To, Bob

AU - Wang, Qi

AU - Sanchez, Errol

AU - Wang, Shulin

PY - 2004

Y1 - 2004

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AB - The deposition of high-quality amorphous silicon nitrides by hot-wire chemical vapor deposition using SiH 4, NH 3 and H 2 gases were investigated. The effects of hydrogen dilution, substrate temperature, chamber pressure and filament temperature on silicon nitride film property were studied to optimize the process. Hydrogen dilution improved the process in that the gas ratio of NH 3/SiH 4 was found to be greatly reduced with the assistance of the H 2 gas. The low-substrate-temperature and conformal films can be applied to many applications, such as dielectrics in electronic devices on plastic substrates, protective layers for micromechanical systems and corrosion applications in biochips.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Amorphous Silicon Nitride Deposited by Hot-Wire Chemical Vapor Deposition

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