Amorphous Solid without Low Energy Excitations

Research output: Contribution to journalArticlepeer-review

Abstract

We have measured the low temperature internal friction (Q-1) of amorphous silicon (a-Si) films. e-beam evaporation of 28Si+ implantation leads to the temperature-independent Qo-1 plateau common to all amorphous solids. For hydrogenated amorphous silicon with 1 at. % H produced by hot wire chemical vapor deposition, however, Qo-1 is over 200 times smaller than for e-beam a-Si. This is the firstobservation of an amorphous solid without any significant low energy excitations. It offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.
Original languageAmerican English
Pages (from-to)4418-4421
Number of pages4
JournalPhysical Review Letters
Volume78
Issue number23
DOIs
StatePublished - 1997

NREL Publication Number

  • NREL/JA-520-20186

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