Amorphous Solid without Low Energy Excitations

doi:10.1103/PhysRevLett.78.4418

Amorphous Solid without Low Energy Excitations

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Abstract

We have measured the low temperature internal friction (Q-1) of amorphous silicon (a-Si) films. e-beam evaporation of 28Si+ implantation leads to the temperature-independent Qo-1 plateau common to all amorphous solids. For hydrogenated amorphous silicon with 1 at. % H produced by hot wire chemical vapor deposition, however, Qo-1 is over 200 times smaller than for e-beam a-Si. This is the firstobservation of an amorphous solid without any significant low energy excitations. It offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.

Original language	American English
Pages (from-to)	4418-4421
Number of pages	4
Journal	Physical Review Letters
Volume	78
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevLett.78.4418
State	Published - 1997

NREL Publication Number

NREL/JA-520-20186

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10.1103/PhysRevLett.78.4418

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title = "Amorphous Solid without Low Energy Excitations",

abstract = "We have measured the low temperature internal friction (Q-1) of amorphous silicon (a-Si) films. e-beam evaporation of 28Si+ implantation leads to the temperature-independent Qo-1 plateau common to all amorphous solids. For hydrogenated amorphous silicon with 1 at. % H produced by hot wire chemical vapor deposition, however, Qo-1 is over 200 times smaller than for e-beam a-Si. This is the firstobservation of an amorphous solid without any significant low energy excitations. It offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.",

author = "NREL",

year = "1997",

doi = "10.1103/PhysRevLett.78.4418",

language = "American English",

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pages = "4418--4421",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "23",

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N2 - We have measured the low temperature internal friction (Q-1) of amorphous silicon (a-Si) films. e-beam evaporation of 28Si+ implantation leads to the temperature-independent Qo-1 plateau common to all amorphous solids. For hydrogenated amorphous silicon with 1 at. % H produced by hot wire chemical vapor deposition, however, Qo-1 is over 200 times smaller than for e-beam a-Si. This is the firstobservation of an amorphous solid without any significant low energy excitations. It offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.

AB - We have measured the low temperature internal friction (Q-1) of amorphous silicon (a-Si) films. e-beam evaporation of 28Si+ implantation leads to the temperature-independent Qo-1 plateau common to all amorphous solids. For hydrogenated amorphous silicon with 1 at. % H produced by hot wire chemical vapor deposition, however, Qo-1 is over 200 times smaller than for e-beam a-Si. This is the firstobservation of an amorphous solid without any significant low energy excitations. It offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.

U2 - 10.1103/PhysRevLett.78.4418

DO - 10.1103/PhysRevLett.78.4418

M3 - Article

SN - 0031-9007

VL - 78

SP - 4418

EP - 4421

JO - Physical Review Letters

JF - Physical Review Letters

IS - 23

ER -

Amorphous Solid without Low Energy Excitations

Abstract

NREL Publication Number

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