Amorphous Sulfide Heterostructure Precursors Prepared by Radio Frequency Sputtering: Article No. 051201

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Abstract

Two-dimensional sulfides and their heterostructures have emerged as potentially useful materials for technological applications. Controllable self-assembly of interleaved crystalline heterostructures from designed thin-film precursors has been demonstrated in selenide and telluride chemical systems, but not yet in sulfide chemistries. Preparing such amorphous sulfide heterostructure precursors is a necessary first step toward this goal. Here, deposition of thin-film amorphous precursors for layered sulfide heterostructures by RF sputtering is presented on the example of SnS-MoS2. A calibration process specific to the mechanisms of RF sputtering from sulfide and disulfide compound targets is established. Precursor film structure and composition are confirmed via x-ray reflectivity and Rutherford backscattering measurements. Local nanostructure and composition are also examined by electron microscopy and electron energy loss spectroscopy.
Original languageAmerican English
Number of pages8
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume37
Issue number5
DOIs
StatePublished - 2019

NREL Publication Number

  • NREL/JA-5K00-73503

Keywords

  • electron energy loss spectroscopy
  • electron microscopy
  • heterostructures
  • Rutherford backscattering spectroscopy
  • sputter deposition
  • sulfur compounds
  • thin films

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