Abstract
We have employed a combinatorial high-throughput approach to explore transparent conducting oxide (TCO) materials deposited at Ts ≤ 100 C. For In-Zn-O (IZO) thin films deposited by sputtering from ceramic metal oxide targets at 100 °C in argon, a broad maximum in the as-deposited conductivity is found for x - 0.55 to 0.85 in InxZn1-xOy with σmax ≈ 3000 Ω-1-cm-1 for x ≈ 0.8. This conductivity maximum correlates with the composition range found to be amorphous. These amorphous In-Zn-O (a-IZO) films are smooth, with an RMS roughness of ∼ 0.3 nm. Post-deposition annealing experiments show that the a-IZO materials remain amorphous after 1 hour anneals at up to 600 °C in either air or argon.
Original language | American English |
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Pages | 202-204 |
Number of pages | 3 |
DOIs | |
State | Published - 2006 |
Event | 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006 |
Conference
Conference | 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 |
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Country/Territory | United States |
City | Waikoloa, HI |
Period | 7/05/06 → 12/05/06 |
NREL Publication Number
- NREL/CP-520-39884