Amorphous transparent conducting oxides (TCOS) deposited at T ≤ 100 °C

J. D. Perkins, M. F.A.M. Van Hest, C. W. Teplin, J. L. Alleman, M. S. Dabney, L. M. Gedvilas, B. M. Keyes, B. To, D. S. Ginley, M. P. Taylor, D. W. Readey

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations

Abstract

We have employed a combinatorial high-throughput approach to explore transparent conducting oxide (TCO) materials deposited at Ts ≤ 100 C. For In-Zn-O (IZO) thin films deposited by sputtering from ceramic metal oxide targets at 100 °C in argon, a broad maximum in the as-deposited conductivity is found for x - 0.55 to 0.85 in InxZn1-xOy with σmax ≈ 3000 Ω-1-cm-1 for x ≈ 0.8. This conductivity maximum correlates with the composition range found to be amorphous. These amorphous In-Zn-O (a-IZO) films are smooth, with an RMS roughness of ∼ 0.3 nm. Post-deposition annealing experiments show that the a-IZO materials remain amorphous after 1 hour anneals at up to 600 °C in either air or argon.

Original languageAmerican English
Pages202-204
Number of pages3
DOIs
StatePublished - 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 7 May 200612 May 2006

Conference

Conference2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/TerritoryUnited States
CityWaikoloa, HI
Period7/05/0612/05/06

NREL Publication Number

  • NREL/CP-520-39884

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