Amorphous transparent conducting oxides (TCOS) deposited at T ≤ 100 °C

J. D. Perkins; M. F.A.M. Van Hest; C. W. Teplin; J. L. Alleman; M. S. Dabney; L. M. Gedvilas; B. M. Keyes; B. To; D. S. Ginley; M. P. Taylor; D. W. Readey

doi:10.1109/WCPEC.2006.279417

Amorphous transparent conducting oxides (TCOS) deposited at T ≤ 100 °C

J. D. Perkins
, M. F.A.M. Van Hest
, C. W. Teplin
, J. L. Alleman
, M. S. Dabney
, L. M. Gedvilas
, B. M. Keyes
, B. To
, D. S. Ginley
, M. P. Taylor
, D. W. Readey

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

We have employed a combinatorial high-throughput approach to explore transparent conducting oxide (TCO) materials deposited at Ts ≤ 100 C. For In-Zn-O (IZO) thin films deposited by sputtering from ceramic metal oxide targets at 100 °C in argon, a broad maximum in the as-deposited conductivity is found for x - 0.55 to 0.85 in In_xZn_1-xO_y with σ_max ≈ 3000 Ω^-1-cm^-1 for x ≈ 0.8. This conductivity maximum correlates with the composition range found to be amorphous. These amorphous In-Zn-O (a-IZO) films are smooth, with an RMS roughness of ∼ 0.3 nm. Post-deposition annealing experiments show that the a-IZO materials remain amorphous after 1 hour anneals at up to 600 °C in either air or argon.

Original language	American English
Pages	202-204
Number of pages	3
DOIs	https://doi.org/10.1109/WCPEC.2006.279417 https://doi.org/10.1109/WCPEC.2006.279417
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

NLR Publication Number

NREL/CP-520-39884

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Perkins, J. D., Van Hest, M. F. A. M., Teplin, C. W., Alleman, J. L., Dabney, M. S., Gedvilas, L. M., Keyes, B. M., To, B., Ginley, D. S., Taylor, M. P., & Readey, D. W. (2006). Amorphous transparent conducting oxides (TCOS) deposited at T ≤ 100 °C. 202-204. Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States. https://doi.org/10.1109/WCPEC.2006.279417, https://doi.org/10.1109/WCPEC.2006.279417

@conference{3fdf94a69cb642878dacd8dcbe9cd704,

title = "Amorphous transparent conducting oxides (TCOS) deposited at T ≤ 100 °C",

abstract = "We have employed a combinatorial high-throughput approach to explore transparent conducting oxide (TCO) materials deposited at Ts ≤ 100 C. For In-Zn-O (IZO) thin films deposited by sputtering from ceramic metal oxide targets at 100 °C in argon, a broad maximum in the as-deposited conductivity is found for x - 0.55 to 0.85 in InxZn1-xOy with σmax ≈ 3000 Ω-1-cm-1 for x ≈ 0.8. This conductivity maximum correlates with the composition range found to be amorphous. These amorphous In-Zn-O (a-IZO) films are smooth, with an RMS roughness of ∼ 0.3 nm. Post-deposition annealing experiments show that the a-IZO materials remain amorphous after 1 hour anneals at up to 600 °C in either air or argon.",

author = "Perkins, \{J. D.\} and \{Van Hest\}, \{M. F.A.M.\} and Teplin, \{C. W.\} and Alleman, \{J. L.\} and Dabney, \{M. S.\} and Gedvilas, \{L. M.\} and Keyes, \{B. M.\} and B. To and Ginley, \{D. S.\} and Taylor, \{M. P.\} and Readey, \{D. W.\}",

year = "2006",

doi = "10.1109/WCPEC.2006.279417",

language = "American English",

pages = "202--204",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

}

Perkins, JD, Van Hest, MFAM, Teplin, CW, Alleman, JL, Dabney, MS, Gedvilas, LM, Keyes, BM, To, B, Ginley, DS, Taylor, MP & Readey, DW 2006, 'Amorphous transparent conducting oxides (TCOS) deposited at T ≤ 100 °C', Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 7/05/06 - 12/05/06 pp. 202-204. https://doi.org/10.1109/WCPEC.2006.279417, https://doi.org/10.1109/WCPEC.2006.279417

TY - CONF

T1 - Amorphous transparent conducting oxides (TCOS) deposited at T ≤ 100 °C

AU - Perkins, J. D.

AU - Van Hest, M. F.A.M.

AU - Teplin, C. W.

AU - Alleman, J. L.

AU - Dabney, M. S.

AU - Gedvilas, L. M.

AU - Keyes, B. M.

AU - To, B.

AU - Ginley, D. S.

AU - Taylor, M. P.

AU - Readey, D. W.

PY - 2006

Y1 - 2006

N2 - We have employed a combinatorial high-throughput approach to explore transparent conducting oxide (TCO) materials deposited at Ts ≤ 100 C. For In-Zn-O (IZO) thin films deposited by sputtering from ceramic metal oxide targets at 100 °C in argon, a broad maximum in the as-deposited conductivity is found for x - 0.55 to 0.85 in InxZn1-xOy with σmax ≈ 3000 Ω-1-cm-1 for x ≈ 0.8. This conductivity maximum correlates with the composition range found to be amorphous. These amorphous In-Zn-O (a-IZO) films are smooth, with an RMS roughness of ∼ 0.3 nm. Post-deposition annealing experiments show that the a-IZO materials remain amorphous after 1 hour anneals at up to 600 °C in either air or argon.

AB - We have employed a combinatorial high-throughput approach to explore transparent conducting oxide (TCO) materials deposited at Ts ≤ 100 C. For In-Zn-O (IZO) thin films deposited by sputtering from ceramic metal oxide targets at 100 °C in argon, a broad maximum in the as-deposited conductivity is found for x - 0.55 to 0.85 in InxZn1-xOy with σmax ≈ 3000 Ω-1-cm-1 for x ≈ 0.8. This conductivity maximum correlates with the composition range found to be amorphous. These amorphous In-Zn-O (a-IZO) films are smooth, with an RMS roughness of ∼ 0.3 nm. Post-deposition annealing experiments show that the a-IZO materials remain amorphous after 1 hour anneals at up to 600 °C in either air or argon.

UR - https://www.scopus.com/pages/publications/41749084168

U2 - 10.1109/WCPEC.2006.279417

DO - 10.1109/WCPEC.2006.279417

M3 - Paper

AN - SCOPUS:41749084168

SP - 202

EP - 204

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

Amorphous transparent conducting oxides (TCOS) deposited at T ≤ 100 °C

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