An All Optical Approach for Comprehensive In-Operando Analysis of Radiative and Nonradiative Recombination Processes in GaAs Double Heterostructures

Engineering

• Gallium Arsenide 100%
• Deep Defect 100%
• Internal Quantum Efficiency 100%
• Heterostructures 100%
• Excitation Density 100%
• Transients 50%
• Deep Level 50%
• Capture Cross Section 50%
• Radiative Recombination Rate 50%
• Key Parameter 50%
• Minority Carriers 50%
• Radiative Recombination 50%
• Current-Voltage Characteristic 50%
• Semiconductor Material 50%
• Carrier Concentration 50%

Material Science

• Heterojunction 100%
• Density 100%
• Gallium Arsenide 100%
• Photoluminescence 66%
• Semiconductor Material 33%
• Deep-Level Transient Spectroscopy 33%
• Carrier Concentration 33%
• Current-Voltage Characteristic 33%

Physics

• Minority Carriers 100%
• Majority Carrier 66%
• Photoluminescence 66%
• Plasmon 33%
• Absorption Cross Sections 33%
• Semiconductor (Material) 33%
• Coupled Mode 33%
• Transients 33%
• Phonon 33%