An Electrostatic Barrier to Trap Filling in CuIn1-xGaxSe2

David L. Young; Richard S. Crandall

doi:10.1063/1.1613034

An Electrostatic Barrier to Trap Filling in CuIn1-xGaxSe2

David L. Young, Richard S. Crandall

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

14 Scopus Citations

Abstract

A report on an electrostatic barrier to trap filling in CuIn _1-xGa_xSe₂ was presented. The resulting nonexponential transient capacitance emission signal was recorded for several minutes. The potential barrier height to trap filling was found to be ∼0.3 eV for all-alloy compositions.

Original language	American English
Pages (from-to)	2363-2365
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.1613034 https://doi.org/10.1063/1.1613034
State	Published - 22 Sep 2003

NREL Publication Number

NREL/JA-520-34415

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title = "An Electrostatic Barrier to Trap Filling in CuIn1-xGaxSe2",

abstract = "A report on an electrostatic barrier to trap filling in CuIn 1-xGaxSe2 was presented. The resulting nonexponential transient capacitance emission signal was recorded for several minutes. The potential barrier height to trap filling was found to be ∼0.3 eV for all-alloy compositions.",

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AB - A report on an electrostatic barrier to trap filling in CuIn 1-xGaxSe2 was presented. The resulting nonexponential transient capacitance emission signal was recorded for several minutes. The potential barrier height to trap filling was found to be ∼0.3 eV for all-alloy compositions.

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U2 - 10.1063/1.1613034

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JO - Applied Physics Letters

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An Electrostatic Barrier to Trap Filling in CuIn1-xGaxSe2

Abstract

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