An Electrostatic Barrier to Trap Filling in CuIn1-xGaxSe2

David L. Young, Richard S. Crandall

Research output: Contribution to journalArticlepeer-review

14 Scopus Citations


A report on an electrostatic barrier to trap filling in CuIn 1-xGaxSe2 was presented. The resulting nonexponential transient capacitance emission signal was recorded for several minutes. The potential barrier height to trap filling was found to be ∼0.3 eV for all-alloy compositions.

Original languageAmerican English
Pages (from-to)2363-2365
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 22 Sep 2003

NREL Publication Number

  • NREL/JA-520-34415


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