An RDS, LEED, and STM Study of MOCVD-Prepared Si (100) Surfaces

T. Hannappel, W. E. McMahon, J. M. Olson

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30 Scopus Citations


Clean, As- and P-terminated Si(1 0 0) surfaces were prepared with H 2 carrier gas and AsH3 and PH3 as precursors in an MOCVD chamber. Reflectance difference spectra (RDS) were taken in situ. Samples were then transferred under vacuum to an ultrahigh-vacuum (UHV) chamber for analysis with AES, LEED, and STM. Clean, As-terminated Si(1 0 0) surfaces were achieved by annealing the sample at T < 900 °C supplying either AsH3 or hydrogen (plus background Asx). Various preparation procedures were applied and benchmarked in UHV. Extended annealing under AsH3 led to strongly faceted surfaces whereas AsH3 flow of moderate concentration, temperature, and time led to flat, two-domain, (2 × 1)/(1 × 2) reconstructed surfaces. RD spectra almost identical to RD spectra of As/Si(1 0 0) surfaces prepared in UHV with MBE were obtained by annealing the samples under AsH3. Annealing under PH3 supply bore a new, two-domain (6 × 3)/(3 × 6) surface reconstruction at low flows, and a SiP compound at high flows.

Original languageAmerican English
Pages (from-to)24-29
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4 SPEC. ISS.
StatePublished - 10 Dec 2004

NREL Publication Number

  • NREL/JA-520-37866


  • A1. Adsorption
  • A1. Reflectance difference spectroscopy
  • A1. Scanning tunneling microscopy
  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting III-V materials
  • B2. Semiconducting silicon


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