An X-Ray Photoelectron Spectroscopy Investigation of O Impurity Chemistry in CdS Thin Films Grown By Chemical Bath Deposition

David W. Niles, Gregory Herdt, Mowafak Al-Jassim

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Abstract

We used x-ray photoelectron spectroscopy to investigate the chemistry of O impurity atoms in CdS thin films grown for photovoltaic purposes by chemical-bath deposition (CBD). We compared the Cd 3d photoline, O 1 s photoline, Cd MNN Auger line, and O KLL Auger line taken from a CBD CdS thin film, CdS single-crystal reference, Cd metal reference, CdO reference, and Cd(OH)2 reference. This comparison showed that the O present in thin-film CBD CdS is a manifestation of H2O incorporated into the film during the CBD growth. Ar+ ion sputtering, a technique frequently used in thin-film analyses, preferentially removed S from the CBD CdS thin film and created CdS1 - xOx (x∼0.04) in the surface region from the incorporated O impurity.

Original languageAmerican English
Pages (from-to)1978-1984
Number of pages7
JournalJournal of Applied Physics
Volume81
Issue number4
DOIs
StatePublished - 15 Feb 1997

NREL Publication Number

  • NREL/JA-412-21695

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