Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

Emre Gurpinar, Raj Sahu, Burak Ozpineci, Douglas DeVoto

Research output: Contribution to conferencePaperpeer-review

12 Scopus Citations

Abstract

In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.

Original languageAmerican English
Number of pages6
DOIs
StatePublished - 23 Sep 2020
Event2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 - Suita, Japan
Duration: 23 Sep 202025 Sep 2020

Conference

Conference2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
Country/TerritoryJapan
CitySuita
Period23/09/2025/09/20

Bibliographical note

See NREL/CP-5400-77561 for preprint

NREL Publication Number

  • NREL/CP-5400-79640

Keywords

  • GaN
  • HEMT
  • Integration
  • Power Module
  • Substrate

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