Abstract
In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.
Original language | American English |
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Number of pages | 6 |
DOIs | |
State | Published - 23 Sep 2020 |
Event | 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 - Suita, Japan Duration: 23 Sep 2020 → 25 Sep 2020 |
Conference
Conference | 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 |
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Country/Territory | Japan |
City | Suita |
Period | 23/09/20 → 25/09/20 |
Bibliographical note
See NREL/CP-5400-77561 for preprintNREL Publication Number
- NREL/CP-5400-79640
Keywords
- GaN
- HEMT
- Integration
- Power Module
- Substrate