Analysis of CdS/CdTe Devices Incorporating a ZnTe:Cu/Ti Contact

T. A. Gessert, S. Asher, S. Johnston, M. Young, P. Dippo, C. Corwine

Research output: Contribution to journalArticlepeer-review

31 Scopus Citations


High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cui) and oxygen on Te (OTe) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe.

Original languageAmerican English
Pages (from-to)6103-6106
Number of pages4
JournalThin Solid Films
Issue number15
StatePublished - 2007

NREL Publication Number

  • NREL/JA-520-39952


Dive into the research topics of 'Analysis of CdS/CdTe Devices Incorporating a ZnTe:Cu/Ti Contact'. Together they form a unique fingerprint.

Cite this