Analysis of CdS/CdTe Devices Incorporating a ZnTe:Cu/Ti Contact

T. A. Gessert; S. Asher; S. Johnston; M. Young; P. Dippo; C. Corwine

doi:10.1016/j.tsf.2006.12.107

Analysis of CdS/CdTe Devices Incorporating a ZnTe:Cu/Ti Contact

T. A. Gessert, S. Asher, S. Johnston, M. Young, P. Dippo, C. Corwine

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

31 Scopus Citations

Abstract

High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cu_i) and oxygen on Te (O_Te) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe.

Original language	American English
Pages (from-to)	6103-6106
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	15
DOIs	https://doi.org/10.1016/j.tsf.2006.12.107 https://doi.org/10.1016/j.tsf.2006.12.107
State	Published - 2007

NREL Publication Number

NREL/JA-520-39952

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title = "Analysis of CdS/CdTe Devices Incorporating a ZnTe:Cu/Ti Contact",

abstract = "High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cui) and oxygen on Te (OTe) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe.",

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T1 - Analysis of CdS/CdTe Devices Incorporating a ZnTe:Cu/Ti Contact

AU - Gessert, T. A.

AU - Asher, S.

AU - Johnston, S.

AU - Young, M.

AU - Dippo, P.

AU - Corwine, C.

PY - 2007

Y1 - 2007

N2 - High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cui) and oxygen on Te (OTe) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe.

AB - High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cui) and oxygen on Te (OTe) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe.

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Analysis of CdS/CdTe Devices Incorporating a ZnTe:Cu/Ti Contact

Abstract

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