Abstract
Presented at the 2001 NCPV Program Review Meeting: Group III-nitride-arsenide materials were studied by SIMS, XRD, and Profiler to determine small amounts of nitrogen that can lower the alloy's bandgap significantly.
Original language | American English |
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Number of pages | 4 |
State | Published - 2001 |
Event | NCPV Program Review Meeting - Lakewood, Colorado Duration: 14 Oct 2001 → 17 Oct 2001 |
Conference
Conference | NCPV Program Review Meeting |
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City | Lakewood, Colorado |
Period | 14/10/01 → 17/10/01 |
NREL Publication Number
- NREL/CP-520-31005
Keywords
- Group III-nitride-arsenide materials
- multijunction solar cells
- NCPV
- nitrogen
- PV
- SIMS