Analysis of Nitrogen Incorporation in Group III-Nitride-Arsenide Materials Using a Magnetic Sector Secondary-Ion Mass Spectrometry (SIMS) Instrument: Preprint

    Research output: Contribution to conferencePaper

    Abstract

    Presented at the 2001 NCPV Program Review Meeting: Group III-nitride-arsenide materials were studied by SIMS, XRD, and Profiler to determine small amounts of nitrogen that can lower the alloy's bandgap significantly.
    Original languageAmerican English
    Number of pages4
    StatePublished - 2001
    EventNCPV Program Review Meeting - Lakewood, Colorado
    Duration: 14 Oct 200117 Oct 2001

    Conference

    ConferenceNCPV Program Review Meeting
    CityLakewood, Colorado
    Period14/10/0117/10/01

    NREL Publication Number

    • NREL/CP-520-31005

    Keywords

    • Group III-nitride-arsenide materials
    • multijunction solar cells
    • NCPV
    • nitrogen
    • PV
    • SIMS

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