Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

Darius Kuciauskas; Keith Wernsing; Soren Alkaersig Jensen; Teresa M. Barnes; Thomas H. Myers; Randy A. Bartels

doi:10.1109/JPHOTOV.2016.2600342

Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

Darius Kuciauskas, Keith Wernsing, Soren Alkaersig Jensen, Teresa M. Barnes, Thomas H. Myers, Randy A. Bartels

Research output: Contribution to journal › Article › peer-review

8 Scopus Citations

Abstract

We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm²/(V·s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.

Original language	American English
Pages (from-to)	1581-1586
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	6
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2016.2600342 https://doi.org/10.1109/JPHOTOV.2016.2600342
State	Published - Nov 2016

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

NREL Publication Number

NREL/JA-5900-66373

Keywords

Cadmium telluride
photoluminescence (PL)
photovoltaic (PV) device
recombination

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy",

abstract = "We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm2/(V·s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.",

keywords = "Cadmium telluride, photoluminescence (PL), photovoltaic (PV) device, recombination",

author = "Darius Kuciauskas and Keith Wernsing and Jensen, {Soren Alkaersig} and Barnes, {Teresa M.} and Myers, {Thomas H.} and Bartels, {Randy A.}",

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year = "2016",

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language = "American English",

volume = "6",

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AU - Kuciauskas, Darius

AU - Wernsing, Keith

AU - Jensen, Soren Alkaersig

AU - Barnes, Teresa M.

AU - Myers, Thomas H.

AU - Bartels, Randy A.

PY - 2016/11

Y1 - 2016/11

N2 - We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm2/(V·s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.

AB - We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm2/(V·s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.

KW - Cadmium telluride

KW - photoluminescence (PL)

KW - photovoltaic (PV) device

KW - recombination

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SN - 2156-3381

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JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

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ER -

Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

Abstract

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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