Abstract
This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflectioncoatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than~75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures suchas a GaInP/GaAs/0.9-eV three-junction device.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2002 |
| Event | 29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002 |
Conference
| Conference | 29th IEEE PV Specialists Conference |
|---|---|
| City | New Orleans, Louisiana |
| Period | 20/05/02 → 24/05/02 |
Bibliographical note
Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, LouisianaNREL Publication Number
- NREL/CP-520-32188
Keywords
- four-junction solar cell
- GaInNAs
- GaInP/GaAs/1-EV/Ge
- junctions
- minority-carrier
- photocurrent
- PV
- terrestrial concentrator spectrum
- two-layer antireflection coatings