Analysis of the ZnTe:Cu Contact on CdS/CdTe Solar Cells: Preprint

Timothy Gessert

Research output: Contribution to conferencePaper


We report on the recent use of cathodoluminescence (CL) to probe the depth-dependent changes in radiative recombination that occur in CdTe devices during ZnTe:Cu contacting procedures. These types of CL measurements may be useful to assist in linking impurity diffusion (e.g., Cu) from the contact with depth-dependent variation in electrical activation within the CdTe layer. Variable-energy CLsuggests that diffusion from the ZnTe:Cu contact interface may assist in reducing donors levels in the CdTe bulk, and thereby yield p-type material in the region near the contact. CL analysis near abrupt metal discontinuities provides estimates of diffusion lengths for carriers associated with both excitonic and donor-to-acceptor pair recombination. Finally, CL measurements at increasingexcitation levels (i.e., increasing electron-beam current) provides estimates of the defect state density, as well as providing evidence that discrete multiple defect bands may exist in CdTe prior to contacting.
Original languageAmerican English
Number of pages9
StatePublished - 2003
Event2003 Materials Research Society Spring Meeting - San Francisco, California
Duration: 21 Apr 200325 Apr 2003


Conference2003 Materials Research Society Spring Meeting
CitySan Francisco, California

NREL Publication Number

  • NREL/CP-520-33940


  • cathodoluminescence (CL) spectroscopy
  • CdTe
  • close-space sublimation (CSS)
  • contact
  • Cu
  • depth-dependent
  • electron-beam induced current (EBIC)
  • PV
  • secondary ion mass spectrometry (SIMS)
  • ZnTe


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