Analytical Modeling of III-V Solar Cells Close to the Fundamental Limit

Matthew P. Lumb; Myles A. Steiner; John F. Geisz; Robert J. Walters

doi:10.1117/12.2041359

Analytical Modeling of III-V Solar Cells Close to the Fundamental Limit

Matthew P. Lumb, Myles A. Steiner, John F. Geisz, Robert J. Walters

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

A highly effective strategy of photon management is to use a back surface reflector. In this work, we present a full analytical model incorporating effects from both the modified generation function and photon recycling in GaAs solar cells with a BSR. We discuss the impact of doping concentration, non-radiative recombination, solar cell dimensions and BSR reflectivity on the efficiency, and compare the prediction of the device models to experimental data measured on GaAs devices. We use the model to predict the performance of alternative III-V materials, such as InP, comparing the predicted performance to state-of-the-art GaAs solar cells.

Original language	American English
Number of pages	9
DOIs	https://doi.org/10.1117/12.2041359 https://doi.org/10.1117/12.2041359
State	Published - 2014
Event	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III - San Francisco, CA, United States Duration: 3 Feb 2014 → 6 Feb 2014

Conference

Conference	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Country/Territory	United States
City	San Francisco, CA
Period	3/02/14 → 6/02/14

NREL Publication Number

NREL/CP-5J00-62376

Keywords

Gaas
High efficiency
Inp
Modeling
Photovoltaics
Reflector
Solar cell

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title = "Analytical Modeling of III-V Solar Cells Close to the Fundamental Limit",

abstract = "A highly effective strategy of photon management is to use a back surface reflector. In this work, we present a full analytical model incorporating effects from both the modified generation function and photon recycling in GaAs solar cells with a BSR. We discuss the impact of doping concentration, non-radiative recombination, solar cell dimensions and BSR reflectivity on the efficiency, and compare the prediction of the device models to experimental data measured on GaAs devices. We use the model to predict the performance of alternative III-V materials, such as InP, comparing the predicted performance to state-of-the-art GaAs solar cells.",

keywords = "Gaas, High efficiency, Inp, Modeling, Photovoltaics, Reflector, Solar cell",

author = "Lumb, {Matthew P.} and Steiner, {Myles A.} and Geisz, {John F.} and Walters, {Robert J.}",

year = "2014",

doi = "10.1117/12.2041359",

language = "American English",

note = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III ; Conference date: 03-02-2014 Through 06-02-2014",

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TY - CONF

T1 - Analytical Modeling of III-V Solar Cells Close to the Fundamental Limit

AU - Lumb, Matthew P.

AU - Steiner, Myles A.

AU - Geisz, John F.

AU - Walters, Robert J.

PY - 2014

Y1 - 2014

N2 - A highly effective strategy of photon management is to use a back surface reflector. In this work, we present a full analytical model incorporating effects from both the modified generation function and photon recycling in GaAs solar cells with a BSR. We discuss the impact of doping concentration, non-radiative recombination, solar cell dimensions and BSR reflectivity on the efficiency, and compare the prediction of the device models to experimental data measured on GaAs devices. We use the model to predict the performance of alternative III-V materials, such as InP, comparing the predicted performance to state-of-the-art GaAs solar cells.

AB - A highly effective strategy of photon management is to use a back surface reflector. In this work, we present a full analytical model incorporating effects from both the modified generation function and photon recycling in GaAs solar cells with a BSR. We discuss the impact of doping concentration, non-radiative recombination, solar cell dimensions and BSR reflectivity on the efficiency, and compare the prediction of the device models to experimental data measured on GaAs devices. We use the model to predict the performance of alternative III-V materials, such as InP, comparing the predicted performance to state-of-the-art GaAs solar cells.

KW - Gaas

KW - High efficiency

KW - Inp

KW - Modeling

KW - Photovoltaics

KW - Reflector

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=84901809763&partnerID=8YFLogxK

U2 - 10.1117/12.2041359

DO - 10.1117/12.2041359

M3 - Paper

AN - SCOPUS:84901809763

T2 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III

Y2 - 3 February 2014 through 6 February 2014

ER -

Analytical Modeling of III-V Solar Cells Close to the Fundamental Limit

Abstract

Conference

NREL Publication Number

Keywords

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