Analytical (S)TEM Studies of Defects Associated with PID in Stressed Si PV Modules

Andrew Norman; John Moseley; Steven Harvey; Steven Johnston; Harvey Guthrey; Mowafak Al-Jassim; Adam Stokes

doi:10.1109/PVSC.2017.8366212

Analytical (S)TEM Studies of Defects Associated with PID in Stressed Si PV Modules

Andrew Norman, John Moseley, Steven Harvey, Steven Johnston, Harvey Guthrey, Mowafak Al-Jassim, Adam Stokes

Materials Science

Colorado School of Mines

Research output: Contribution to conference › Paper

Abstract

We report the results of analytical transmission electron microscopy studies of defects associated with potentialinduced degradation (PID) of a laboratory stressed multicrystalline silicon mini-module. Shunt defects were first identified using dark lock in thermography (DLIT) and scanning electron microscopy (SEM) electron beam induced current (EBIC) imaging. Transmission electron microscopy (TEM) crosssection samples were then prepared of selected shunt defects using conventional focused ion beam (FIB) lift out techniques and examined by TEM and scanning transmission electron microscopy (STEM). The defects were identified as {111} planar defects and compositional mapping of the defects revealed elevated levels of both Na, expected from previous work, and also surprisingly O at some of the defect cores.

Original language	American English
Pages	2887-2890
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2017.8366212
State	Published - 2018
Event	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
City	Washington, D.C.
Period	25/06/17 → 30/06/17

NREL Publication Number

NREL/CP-5K00-67822

Keywords

photovoltaic cells
potential induced degradation
silicon
transmission electron microscopy

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10.1109/PVSC.2017.8366212

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title = "Analytical (S)TEM Studies of Defects Associated with PID in Stressed Si PV Modules",

abstract = "We report the results of analytical transmission electron microscopy studies of defects associated with potentialinduced degradation (PID) of a laboratory stressed multicrystalline silicon mini-module. Shunt defects were first identified using dark lock in thermography (DLIT) and scanning electron microscopy (SEM) electron beam induced current (EBIC) imaging. Transmission electron microscopy (TEM) crosssection samples were then prepared of selected shunt defects using conventional focused ion beam (FIB) lift out techniques and examined by TEM and scanning transmission electron microscopy (STEM). The defects were identified as {111} planar defects and compositional mapping of the defects revealed elevated levels of both Na, expected from previous work, and also surprisingly O at some of the defect cores.",

keywords = "photovoltaic cells, potential induced degradation, silicon, transmission electron microscopy",

author = "Andrew Norman and John Moseley and Steven Harvey and Steven Johnston and Harvey Guthrey and Mowafak Al-Jassim and Adam Stokes",

year = "2018",

doi = "10.1109/PVSC.2017.8366212",

language = "American English",

pages = "2887--2890",

note = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ; Conference date: 25-06-2017 Through 30-06-2017",

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TY - CONF

T1 - Analytical (S)TEM Studies of Defects Associated with PID in Stressed Si PV Modules

AU - Norman, Andrew

AU - Moseley, John

AU - Harvey, Steven

AU - Johnston, Steven

AU - Guthrey, Harvey

AU - Al-Jassim, Mowafak

AU - Stokes, Adam

PY - 2018

Y1 - 2018

N2 - We report the results of analytical transmission electron microscopy studies of defects associated with potentialinduced degradation (PID) of a laboratory stressed multicrystalline silicon mini-module. Shunt defects were first identified using dark lock in thermography (DLIT) and scanning electron microscopy (SEM) electron beam induced current (EBIC) imaging. Transmission electron microscopy (TEM) crosssection samples were then prepared of selected shunt defects using conventional focused ion beam (FIB) lift out techniques and examined by TEM and scanning transmission electron microscopy (STEM). The defects were identified as {111} planar defects and compositional mapping of the defects revealed elevated levels of both Na, expected from previous work, and also surprisingly O at some of the defect cores.

AB - We report the results of analytical transmission electron microscopy studies of defects associated with potentialinduced degradation (PID) of a laboratory stressed multicrystalline silicon mini-module. Shunt defects were first identified using dark lock in thermography (DLIT) and scanning electron microscopy (SEM) electron beam induced current (EBIC) imaging. Transmission electron microscopy (TEM) crosssection samples were then prepared of selected shunt defects using conventional focused ion beam (FIB) lift out techniques and examined by TEM and scanning transmission electron microscopy (STEM). The defects were identified as {111} planar defects and compositional mapping of the defects revealed elevated levels of both Na, expected from previous work, and also surprisingly O at some of the defect cores.

KW - photovoltaic cells

KW - potential induced degradation

KW - silicon

KW - transmission electron microscopy

U2 - 10.1109/PVSC.2017.8366212

DO - 10.1109/PVSC.2017.8366212

M3 - Paper

SP - 2887

EP - 2890

T2 - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Y2 - 25 June 2017 through 30 June 2017

ER -

Analytical (S)TEM Studies of Defects Associated with PID in Stressed Si PV Modules

Abstract

Conference

NREL Publication Number

Keywords

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