Anharmonicity in Light Scattering by Optical Phonons in GaAs1-xBix: Article No. 205706

Angelo Mascarenhas, R. Joshya, V. Rajaji, Chandrabhas Narayana, R. Kini

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We present a Raman spectroscopic study of GaAs 1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO'GaAs) of GaAs 1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs 1-xBix as evident from the increase in the anharmonicity constants. In addition, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs 1-xBix.
Original languageAmerican English
Number of pages5
JournalJournal of Applied Physics
Issue number20
StatePublished - 2016

NREL Publication Number

  • NREL/JA-5K00-66640


  • bismuth
  • III-V semiconductors
  • linewidths
  • red shift
  • thermoelectric effects


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