Anharmonicity in Light Scattering by Optical Phonons in GaAs1-xBix: Article No. 205706

Angelo Mascarenhas; R. Joshya; V. Rajaji; Chandrabhas Narayana; R. Kini

doi:10.1063/1.4952381

Anharmonicity in Light Scattering by Optical Phonons in GaAs1-xBix: Article No. 205706

Angelo Mascarenhas, R. Joshya, V. Rajaji, Chandrabhas Narayana, R. Kini

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Abstract

We present a Raman spectroscopic study of GaAs 1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO'GaAs) of GaAs 1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs 1-xBix as evident from the increase in the anharmonicity constants. In addition, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs 1-xBix.

Original language	American English
Number of pages	5
Journal	Journal of Applied Physics
Volume	119
Issue number	20
DOIs	https://doi.org/10.1063/1.4952381
State	Published - 2016

NREL Publication Number

NREL/JA-5K00-66640

Keywords

bismuth
III-V semiconductors
linewidths
red shift
thermoelectric effects

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10.1063/1.4952381

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@article{ddd208edb56644b5ab4da536fe66a42a,

title = "Anharmonicity in Light Scattering by Optical Phonons in GaAs1-xBix: Article No. 205706",

abstract = "We present a Raman spectroscopic study of GaAs 1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO'GaAs) of GaAs 1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs 1-xBix as evident from the increase in the anharmonicity constants. In addition, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs 1-xBix.",

keywords = "bismuth, III-V semiconductors, linewidths, red shift, thermoelectric effects",

author = "Angelo Mascarenhas and R. Joshya and V. Rajaji and Chandrabhas Narayana and R. Kini",

year = "2016",

doi = "10.1063/1.4952381",

language = "American English",

volume = "119",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "20",

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TY - JOUR

T1 - Anharmonicity in Light Scattering by Optical Phonons in GaAs1-xBix

T2 - Article No. 205706

AU - Mascarenhas, Angelo

AU - Joshya, R.

AU - Rajaji, V.

AU - Narayana, Chandrabhas

AU - Kini, R.

PY - 2016

Y1 - 2016

N2 - We present a Raman spectroscopic study of GaAs 1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO'GaAs) of GaAs 1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs 1-xBix as evident from the increase in the anharmonicity constants. In addition, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs 1-xBix.

AB - We present a Raman spectroscopic study of GaAs 1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO'GaAs) of GaAs 1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs 1-xBix as evident from the increase in the anharmonicity constants. In addition, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs 1-xBix.

KW - bismuth

KW - III-V semiconductors

KW - linewidths

KW - red shift

KW - thermoelectric effects

U2 - 10.1063/1.4952381

DO - 10.1063/1.4952381

M3 - Article

SN - 0021-8979

VL - 119

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 20

ER -

Anharmonicity in Light Scattering by Optical Phonons in GaAs1-xBix: Article No. 205706

Abstract

NREL Publication Number

Keywords

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