Abstract
We observe a dramatic reduction in the Staebler-Wronski metastable defect creation efficiency in device-quality films of hydrogenated amorphous silicon after they undergo a 20 min anneal treatment at 350 to 400 °C. After several hours of rapid degradation with a high intensity pulsed laser, there are about half as many total dangling bond defects in the annealed samples as in unannealed control samples. This reduction is observed in both 1.02-μm - and 0.22-μm -thick films, indicating it is not a surface-related artifact. The improved stability is likely caused by H motion, which restructures the Si-Si network and H-related nanovoids.
Original language | American English |
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Article number | 201908 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 20 |
DOIs | |
State | Published - 16 May 2011 |
NREL Publication Number
- NREL/JA-5200-50307
Keywords
- defects
- hydrogenated amorphous silicon
- photodegradation