Abstract
We recently reported an NREL certified ∼3% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4%.
Original language | American English |
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Pages | 2619-2621 |
Number of pages | 3 |
DOIs | |
State | Published - 2011 |
Event | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011 |
Conference
Conference | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
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Country/Territory | United States |
City | Seattle, WA |
Period | 19/06/11 → 24/06/11 |
NREL Publication Number
- NREL/CP-5200-51877
Keywords
- photovoltaics
- QDSC
- quantum dot solar cell
- schematic device