Annealing Effect of PbS Quantum Dot Solar Cells

Jianbo Gao, Sohee Jeong, Octavi E. Semonin, Randy J. Ellingson, Arthur J. Nozik, Matthew C. Beard

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


We recently reported an NREL certified ∼3% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4%.

Original languageAmerican English
Number of pages3
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011


Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/TerritoryUnited States
CitySeattle, WA

NREL Publication Number

  • NREL/CP-5200-51877


  • photovoltaics
  • QDSC
  • quantum dot solar cell
  • schematic device


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