Annealing Effect of PbS Quantum Dot Solar Cells

Jianbo Gao; Sohee Jeong; Octavi E. Semonin; Randy J. Ellingson; Arthur J. Nozik; Matthew C. Beard

doi:10.1109/pvsc.2011.6186485

Annealing Effect of PbS Quantum Dot Solar Cells

Jianbo Gao
, Sohee Jeong
, Octavi E. Semonin
, Randy J. Ellingson
, Arthur J. Nozik
, Matthew C. Beard

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

We recently reported an NREL certified ∼3% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4%.

Original language	American English
Pages	2619-2621
Number of pages	3
DOIs	https://doi.org/10.1109/pvsc.2011.6186485 https://doi.org/10.1109/PVSC.2011.6186485
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

NLR Publication Number

NREL/CP-5200-51877

Keywords

photovoltaics
QDSC
quantum dot solar cell
schematic device

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title = "Annealing Effect of PbS Quantum Dot Solar Cells",

abstract = "We recently reported an NREL certified ∼3\% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4\%.",

keywords = "photovoltaics, QDSC, quantum dot solar cell, schematic device",

author = "Jianbo Gao and Sohee Jeong and Semonin, \{Octavi E.\} and Ellingson, \{Randy J.\} and Nozik, \{Arthur J.\} and Beard, \{Matthew C.\}",

year = "2011",

doi = "10.1109/pvsc.2011.6186485",

language = "American English",

pages = "2619--2621",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

TY - CONF

T1 - Annealing Effect of PbS Quantum Dot Solar Cells

AU - Gao, Jianbo

AU - Jeong, Sohee

AU - Semonin, Octavi E.

AU - Ellingson, Randy J.

AU - Nozik, Arthur J.

AU - Beard, Matthew C.

PY - 2011

Y1 - 2011

N2 - We recently reported an NREL certified ∼3% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4%.

AB - We recently reported an NREL certified ∼3% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4%.

KW - photovoltaics

KW - QDSC

KW - quantum dot solar cell

KW - schematic device

UR - https://www.scopus.com/pages/publications/84861068488

U2 - 10.1109/pvsc.2011.6186485

DO - 10.1109/pvsc.2011.6186485

M3 - Paper

AN - SCOPUS:84861068488

SP - 2619

EP - 2621

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -

Annealing Effect of PbS Quantum Dot Solar Cells

Abstract

Conference

NLR Publication Number

Keywords

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