Annealing-Induced-Type Conversion of GaInNAs

Sarah Kurtz, J. F. Geisz, D. J. Friedman, W. K. Metzger, R. R. King, N. H. Karam

Research output: Contribution to journalArticlepeer-review

23 Scopus Citations


The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 17 cm -3.

Original languageAmerican English
Pages (from-to)2505-2508
Number of pages4
JournalJournal of Applied Physics
Issue number5
StatePublished - 2004

NREL Publication Number

  • NREL/JA-520-35176


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