Annealing-Induced-Type Conversion of GaInNAs

Sarah Kurtz; J. F. Geisz; D. J. Friedman; W. K. Metzger; R. R. King; N. H. Karam

doi:10.1063/1.1643775

Annealing-Induced-Type Conversion of GaInNAs

Sarah Kurtz, J. F. Geisz, D. J. Friedman, W. K. Metzger, R. R. King, N. H. Karam

National Renewable Energy Laboratory

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Abstract

The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 ¹⁷ cm ^-3.

Original language	American English
Pages (from-to)	2505-2508
Number of pages	4
Journal	Journal of Applied Physics
Volume	95
Issue number	5
DOIs	https://doi.org/10.1063/1.1643775 https://doi.org/10.1063/1.1643775
State	Published - 2004

NREL Publication Number

NREL/JA-520-35176

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abstract = "The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 17 cm -3.",

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AU - Kurtz, Sarah

AU - Geisz, J. F.

AU - Friedman, D. J.

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AU - King, R. R.

AU - Karam, N. H.

PY - 2004

Y1 - 2004

N2 - The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 17 cm -3.

AB - The p-type to n-type conversion induced in the GaInNAs via the in situ annealing processing was studied. The metalorganic chemical vapor deposition (MOCVD) grown p-type gallium compound was found to convert to n-type when annealed at a temperature of 650 °C. The secondary ion mass spectrometric (SIMS) technique show carbon and hydrogen contamination in the compound layers. Annealing in the absence of H was found to reduce the concentration of background acceptors, but was unable to produce an electron concentration of 10 17 cm -3.

UR - https://www.scopus.com/pages/publications/1642314565

U2 - 10.1063/1.1643775

DO - 10.1063/1.1643775

M3 - Article

AN - SCOPUS:1642314565

SN - 0021-8979

VL - 95

SP - 2505

EP - 2508

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Annealing-Induced-Type Conversion of GaInNAs

Abstract

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