Anodic Oxidation of GaInP2

O. Khaselev; J. A. Turner

doi:10.1016/S0010-938X(00)00016-0

Anodic Oxidation of GaInP2

O. Khaselev, J. A. Turner

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

Anodic films have been grown on GaInP₂ at a constant applied current density in phosphate solutions with pH 4, 7 and 10. XPS analysis revealed that the chemical composition of the anodic films formed in the solutions with pH 7 and 10 is non-uniform with In excess and corresponding Ga and P deficiency in outer layer. The anodic films formed in the solution with pH 4 had uniform composition, apparently due to preferential dissolution of In in this solution. The anodic films were stable when exposed to air for several weeks. (C) 2000 Elsevier Science Ltd. All rights reserved.

Original language	American English
Pages (from-to)	1831-1838
Number of pages	8
Journal	Corrosion Science
Volume	42
Issue number	10
DOIs	https://doi.org/10.1016/S0010-938X(00)00016-0 https://doi.org/10.1016/S0010-938X(00)00016-0
State	Published - 2000

NREL Publication Number

NREL/JA-590-29049

Keywords

Anodic films
GaInP
Oxidation

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title = "Anodic Oxidation of GaInP2",

abstract = "Anodic films have been grown on GaInP2 at a constant applied current density in phosphate solutions with pH 4, 7 and 10. XPS analysis revealed that the chemical composition of the anodic films formed in the solutions with pH 7 and 10 is non-uniform with In excess and corresponding Ga and P deficiency in outer layer. The anodic films formed in the solution with pH 4 had uniform composition, apparently due to preferential dissolution of In in this solution. The anodic films were stable when exposed to air for several weeks. (C) 2000 Elsevier Science Ltd. All rights reserved.",

keywords = "Anodic films, GaInP, Oxidation",

author = "O. Khaselev and Turner, {J. A.}",

year = "2000",

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language = "American English",

volume = "42",

pages = "1831--1838",

journal = "Corrosion Science",

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T1 - Anodic Oxidation of GaInP2

AU - Khaselev, O.

AU - Turner, J. A.

PY - 2000

Y1 - 2000

N2 - Anodic films have been grown on GaInP2 at a constant applied current density in phosphate solutions with pH 4, 7 and 10. XPS analysis revealed that the chemical composition of the anodic films formed in the solutions with pH 7 and 10 is non-uniform with In excess and corresponding Ga and P deficiency in outer layer. The anodic films formed in the solution with pH 4 had uniform composition, apparently due to preferential dissolution of In in this solution. The anodic films were stable when exposed to air for several weeks. (C) 2000 Elsevier Science Ltd. All rights reserved.

AB - Anodic films have been grown on GaInP2 at a constant applied current density in phosphate solutions with pH 4, 7 and 10. XPS analysis revealed that the chemical composition of the anodic films formed in the solutions with pH 7 and 10 is non-uniform with In excess and corresponding Ga and P deficiency in outer layer. The anodic films formed in the solution with pH 4 had uniform composition, apparently due to preferential dissolution of In in this solution. The anodic films were stable when exposed to air for several weeks. (C) 2000 Elsevier Science Ltd. All rights reserved.

KW - Anodic films

KW - GaInP

KW - Oxidation

UR - http://www.scopus.com/inward/record.url?scp=0034308204&partnerID=8YFLogxK

U2 - 10.1016/S0010-938X(00)00016-0

DO - 10.1016/S0010-938X(00)00016-0

M3 - Article

AN - SCOPUS:0034308204

SN - 0010-938X

VL - 42

SP - 1831

EP - 1838

JO - Corrosion Science

JF - Corrosion Science

IS - 10

ER -

Anodic Oxidation of GaInP2

Abstract

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Keywords

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