Anti-Stokes Photoluminescence in Colloidal Semiconductor Quantum Dots

Ehud Poles; Donald C. Selmarten; Olga I. Mićić; Arthur J. Nozik

doi:10.1063/1.124570

Anti-Stokes Photoluminescence in Colloidal Semiconductor Quantum Dots

Ehud Poles, Donald C. Selmarten, Olga I. Mićić, Arthur J. Nozik

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

126 Scopus Citations

Abstract

The highly-efficient anti-Stokes photoluminescence (PL) up-conversion in aged colloidal InP and CdSe quantum dots (QD) at low light intensity is presented. Up-conversion is produced according to the model by photoexcitation from a surface state near the valence band to the conduction band, followed by up-conversion of the resulting hole from this surface state to the valence band. The hole up-conversion process is driven by phonon absorption.

Original language	American English
Pages (from-to)	971-973
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	7
DOIs	https://doi.org/10.1063/1.124570 https://doi.org/10.1063/1.124570
State	Published - 1999

NREL Publication Number

NREL/JA-590-26174

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title = "Anti-Stokes Photoluminescence in Colloidal Semiconductor Quantum Dots",

abstract = "The highly-efficient anti-Stokes photoluminescence (PL) up-conversion in aged colloidal InP and CdSe quantum dots (QD) at low light intensity is presented. Up-conversion is produced according to the model by photoexcitation from a surface state near the valence band to the conduction band, followed by up-conversion of the resulting hole from this surface state to the valence band. The hole up-conversion process is driven by phonon absorption.",

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AB - The highly-efficient anti-Stokes photoluminescence (PL) up-conversion in aged colloidal InP and CdSe quantum dots (QD) at low light intensity is presented. Up-conversion is produced according to the model by photoexcitation from a surface state near the valence band to the conduction band, followed by up-conversion of the resulting hole from this surface state to the valence band. The hole up-conversion process is driven by phonon absorption.

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Anti-Stokes Photoluminescence in Colloidal Semiconductor Quantum Dots

Abstract

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