Anti-Stokes Photoluminescence in Colloidal Semiconductor Quantum Dots

Ehud Poles; Donald C. Selmarten; Olga I. Mićić; Arthur J. Nozik

doi:10.1063/1.124570

Anti-Stokes Photoluminescence in Colloidal Semiconductor Quantum Dots

Ehud Poles
, Donald C. Selmarten
, Olga I. Mićić
, Arthur J. Nozik

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

127 Scopus Citations

Abstract

The highly-efficient anti-Stokes photoluminescence (PL) up-conversion in aged colloidal InP and CdSe quantum dots (QD) at low light intensity is presented. Up-conversion is produced according to the model by photoexcitation from a surface state near the valence band to the conduction band, followed by up-conversion of the resulting hole from this surface state to the valence band. The hole up-conversion process is driven by phonon absorption.

Original language	American English
Pages (from-to)	971-973
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	7
DOIs	https://doi.org/10.1063/1.124570 https://doi.org/10.1063/1.124570
State	Published - 1999

NLR Publication Number

NREL/JA-590-26174

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title = "Anti-Stokes Photoluminescence in Colloidal Semiconductor Quantum Dots",

abstract = "The highly-efficient anti-Stokes photoluminescence (PL) up-conversion in aged colloidal InP and CdSe quantum dots (QD) at low light intensity is presented. Up-conversion is produced according to the model by photoexcitation from a surface state near the valence band to the conduction band, followed by up-conversion of the resulting hole from this surface state to the valence band. The hole up-conversion process is driven by phonon absorption.",

author = "Ehud Poles and Selmarten, \{Donald C.\} and Mi{\'c}i{\'c}, \{Olga I.\} and Nozik, \{Arthur J.\}",

year = "1999",

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journal = "Applied Physics Letters",

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AU - Poles, Ehud

AU - Selmarten, Donald C.

AU - Mićić, Olga I.

AU - Nozik, Arthur J.

PY - 1999

Y1 - 1999

N2 - The highly-efficient anti-Stokes photoluminescence (PL) up-conversion in aged colloidal InP and CdSe quantum dots (QD) at low light intensity is presented. Up-conversion is produced according to the model by photoexcitation from a surface state near the valence band to the conduction band, followed by up-conversion of the resulting hole from this surface state to the valence band. The hole up-conversion process is driven by phonon absorption.

AB - The highly-efficient anti-Stokes photoluminescence (PL) up-conversion in aged colloidal InP and CdSe quantum dots (QD) at low light intensity is presented. Up-conversion is produced according to the model by photoexcitation from a surface state near the valence band to the conduction band, followed by up-conversion of the resulting hole from this surface state to the valence band. The hole up-conversion process is driven by phonon absorption.

UR - https://www.scopus.com/pages/publications/0032606773

U2 - 10.1063/1.124570

DO - 10.1063/1.124570

M3 - Article

AN - SCOPUS:0032606773

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VL - 75

SP - 971

EP - 973

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Anti-Stokes Photoluminescence in Colloidal Semiconductor Quantum Dots

Abstract

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