Antimony Diffusion in CdTe

Eric Colegrove, Steven Harvey, Jihui Yang, David Albin, Wyatt Metzger, Joel Duenow, Su-Huai Wei, James Burst

Research output: Contribution to journalArticlepeer-review

11 Scopus Citations

Abstract

Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. The theory and experimental results create new understanding of group V defect kinetics in CdTe.

Original languageAmerican English
Article number7847422
Pages (from-to)870-873
Number of pages4
JournalIEEE Journal of Photovoltaics
Volume7
Issue number3
DOIs
StatePublished - May 2017

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

NREL Publication Number

  • NREL/JA-5K00-65802

Keywords

  • Antimony
  • Density functional theory
  • Diffusion processes
  • Grain boundaries
  • II-VI semiconductor materials

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