APIVT-Grown Silicon Thin Layers and PV Devices: Preprint

Research output: Contribution to conferencePaper


Large-grained (5-20 ..mu..m) polycrystalline silicon layers have been grown at intermediate temperatures of 750?-950?C directly on foreign substrates without a seeding layer by iodine vapor transport at atmospheric pressure with rates as high as 3 mm/min. A model is constructed to explain the atypical temperature dependence of growth rate. We have also used this technique to grow high-qualityepitaxial layers on heavily doped CZ-Si and on upgraded MG-Si substrates. Possible solar cell structures of thin-layer polycrystalline silicon on foreign substrates with light trapping have been examined, compared, and optimized by two-dimensional device simulations. The effects of grain boundary re-combination on device performance are presented for two grain sizes of 2 and 20 mm. We found that104 cm/s recombination velocity is adequate for 20-m m grain-sized thin silicon, whereas a very low recombination velocity of 103 cm/s must be accomplished in order to achieve reasonable performance for a 2-mm grain-sized polycrystalline silicon device.
Original languageAmerican English
Number of pages7
StatePublished - 2002
Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
Duration: 20 May 200224 May 2002


Conference29th IEEE PV Specialists Conference
CityNew Orleans, Louisiana

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

NREL Publication Number

  • NREL/CP-520-31441


  • atmospheric pressure iodine vapor transport (APIVT)
  • epitaxial layers
  • grain boundary (GBS)
  • microcrystalline silicon
  • PV
  • recombination velocity
  • single junction
  • solar cells
  • two-dimensional device


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