APIVT-Grown Silicon Thin Layers and PV Devices: Preprint

Engineering

• Thin Layer 100%
• Polysilicon 100%
• Foreign Substrate 66%
• Device Performance 33%
• Si Substrate 33%
• Two Dimensional 33%
• Silicon Layer 33%
• Intermediate Temperature 33%
• Silicon Device 33%
• Temperature Dependence 33%
• Solar Cell 33%
• Atmospheric Pressure 33%

Physics

• Polycrystalline 100%
• Solar Cell 33%
• Grain Size 33%
• Atmospheric Pressure 33%
• Temperature Dependence 33%
• Grain Boundary 33%

Material Science

• Silicon 100%
• Solar Cell 25%
• Grain Size 25%
• Silicon Device 25%
• Grain Boundary 25%