Applications of Admittance Spectroscopy in Photovoltaic Devices Beyond Majority Carrier Trapping Defects: Preprint

    Research output: Contribution to conferencePaper

    Abstract

    Admittance spectroscopy is commonly used to characterize majority-carrier trapping defects. In today's practical photovoltaic devices, however, a number of other physical mechanisms may contribute to the admittance measurement and interfere with the data interpretation. Such challenges arise due to the violation of basic assumptions of conventional admittance spectroscopy such as single-junction,ohmic contact, highly conductive absorbers, and measurement in reverse bias. We exploit such violations to devise admittance spectroscopy-based methods for studying the respective origins of 'interference': majority-carrier mobility, non-ohmic contact potential barrier, minority-carrier inversion at hetero-interface, and minority-carrier lifetime in a device environment. These methods areapplied to a variety of photovoltaic technologies: CdTe, Cu(In,Ga)Se2, Si HIT cells, and organic photovoltaic materials.
    Original languageAmerican English
    Number of pages6
    StatePublished - 2011
    Event37th IEEE Photovoltaic Specialists Conference (PVSC 37) - Seattle, Washington
    Duration: 19 Jun 201124 Jun 2011

    Conference

    Conference37th IEEE Photovoltaic Specialists Conference (PVSC 37)
    CitySeattle, Washington
    Period19/06/1124/06/11

    NREL Publication Number

    • NREL/CP-5200-50697

    Keywords

    • admittance spectroscopy
    • defects
    • PV

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