Abstract
Admittance spectroscopy is commonly used to characterize majority-carrier trapping defects. In today's practical photovoltaic devices, however, a number of other physical mechanisms may contribute to the admittance measurement and interfere with the data interpretation. Such challenges arise due to the violation of basic assumptions of conventional admittance spectroscopy such as single-junction,ohmic contact, highly conductive absorbers, and measurement in reverse bias. We exploit such violations to devise admittance spectroscopy-based methods for studying the respective origins of 'interference': majority-carrier mobility, non-ohmic contact potential barrier, minority-carrier inversion at hetero-interface, and minority-carrier lifetime in a device environment. These methods areapplied to a variety of photovoltaic technologies: CdTe, Cu(In,Ga)Se2, Si HIT cells, and organic photovoltaic materials.
Original language | American English |
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Number of pages | 6 |
State | Published - 2011 |
Event | 37th IEEE Photovoltaic Specialists Conference (PVSC 37) - Seattle, Washington Duration: 19 Jun 2011 → 24 Jun 2011 |
Conference
Conference | 37th IEEE Photovoltaic Specialists Conference (PVSC 37) |
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City | Seattle, Washington |
Period | 19/06/11 → 24/06/11 |
NREL Publication Number
- NREL/CP-5200-50697
Keywords
- admittance spectroscopy
- defects
- PV