Applying in Situ Bias During TOF-SIMS Analysis to Investigate Ion Migration in Perovskite Devices

Steven Harvey; Isaac Gould; Daniel Morales; Michael McGehee; Axel Palmstrom

doi:10.1557/s43579-025-00753-6

Applying in Situ Bias During TOF-SIMS Analysis to Investigate Ion Migration in Perovskite Devices

Steven Harvey
, Isaac Gould
, Daniel Morales
, Michael McGehee
, Axel Palmstrom

Materials Science

University of Colorado Boulder

Research output: Contribution to journal › Article › peer-review

Abstract

An in situ electrical bias was placed on a perovskite device through the device thickness while under investigation with time-of-flight secondary ion mass spectrometry. The applied bias resulted in an observed reversible migration of halide and lithium ions on the timescale of minutes. The results show a framework that can be used for further study of ion migration in perovskite materials and devices.

Original language	American English
Pages (from-to)	942-947
Number of pages	6
Journal	MRS Communications
Volume	15
Issue number	5
DOIs	https://doi.org/10.1557/s43579-025-00753-6
State	Published - 2025

NLR Publication Number

NREL/JA-5K00-93811

Keywords

perovskite
SIMS

Access to Document

10.1557/s43579-025-00753-6

Cite this

@article{275a5098a4f4445e8f409f286a87ab71,

title = "Applying in Situ Bias During TOF-SIMS Analysis to Investigate Ion Migration in Perovskite Devices",

abstract = "An in situ electrical bias was placed on a perovskite device through the device thickness while under investigation with time-of-flight secondary ion mass spectrometry. The applied bias resulted in an observed reversible migration of halide and lithium ions on the timescale of minutes. The results show a framework that can be used for further study of ion migration in perovskite materials and devices.",

keywords = "perovskite, SIMS",

author = "Steven Harvey and Isaac Gould and Daniel Morales and Michael McGehee and Axel Palmstrom",

year = "2025",

doi = "10.1557/s43579-025-00753-6",

language = "American English",

volume = "15",

pages = "942--947",

journal = "MRS Communications",

issn = "2159-6859",

publisher = "Springer International Publishing AG",

number = "5",

}

TY - JOUR

T1 - Applying in Situ Bias During TOF-SIMS Analysis to Investigate Ion Migration in Perovskite Devices

AU - Harvey, Steven

AU - Gould, Isaac

AU - Morales, Daniel

AU - McGehee, Michael

AU - Palmstrom, Axel

PY - 2025

Y1 - 2025

N2 - An in situ electrical bias was placed on a perovskite device through the device thickness while under investigation with time-of-flight secondary ion mass spectrometry. The applied bias resulted in an observed reversible migration of halide and lithium ions on the timescale of minutes. The results show a framework that can be used for further study of ion migration in perovskite materials and devices.

AB - An in situ electrical bias was placed on a perovskite device through the device thickness while under investigation with time-of-flight secondary ion mass spectrometry. The applied bias resulted in an observed reversible migration of halide and lithium ions on the timescale of minutes. The results show a framework that can be used for further study of ion migration in perovskite materials and devices.

KW - perovskite

KW - SIMS

U2 - 10.1557/s43579-025-00753-6

DO - 10.1557/s43579-025-00753-6

M3 - Article

SN - 2159-6859

VL - 15

SP - 942

EP - 947

JO - MRS Communications

JF - MRS Communications

IS - 5

ER -

Applying in Situ Bias During TOF-SIMS Analysis to Investigate Ion Migration in Perovskite Devices

Abstract

NLR Publication Number

Keywords

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